Patent US3900345A successfully refreshed from Google Patents.
US3900345A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin low temperature epi regions by conversion of an amorphous layer
Assignee: Motorola Solutions Inc
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Filing: 1973-08-02
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Granted: 1975-08-19
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Expires: 1993-08-02
Abstract
Abstract A method is described for growing thin monocrystalline silicon material upon a supporting substrate. Polycrystalline amorphous material is first deposited on the supporting substrate; then the interface region between the polycrystalline material and the supporting substrate is damaged by ion implantation of compatible ions for establishing an intimate contact between the polycrystalline material and the substrate material at the interface. A low temperature aneal cycle is next performed whereby the polycrystalline material is changed to monocrystalline.
Inventors
- 👤 Israel A Lesk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 12:20
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/085; Y10S148/122; Y10S148/15
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
153 words
A METHOD FOR FORMING A THIN LAYER OF MONOCRYSTALLINE SILICON ATOP A SUPPORTING MONOCRYSTALLINE SILICON SUBSTRATE COMPRISING THE STEPS OF, PROVIDING A MONOCRYSTALLINE SILICON SUBSTRATE, SAID SUBSTRATE HAVING A THIN OXIDE LAYER ON ITS UPPER SURFACE, DEPOSITING A POLYCRYSTALLINE SILICON AMORPHOUS LAYER ATOP THE THIN OXIDE LAYER ON SAID MONOCRYSTALLINE SILICON SUBSTRATE AT A TEMPERATURE LYING WITHIN THE RANGE OF 500*C TO 600*C, THEREBY FORMING AN INTERFACE INCLUDING THE THIN OXIDE LAYER BETWEEN SAID MONOCRYSTALLINE SUBSTRATE AND SAID POLYCRYSTALLINE SILICON LAYER, IMPLANTING IONS THROUGH SAID POLYCRYSTALLINE SILICON LAYER INTO SAID SUBSTRATE TO A SUFFICIENT EXTENT TO DAMAGE THE INTERFACE INCLUDING THE THIN OXIDE LAYER BETWEEN SAID SUBSTRATE AND SAID POLYCRYSTALLINE SILICON LAYER, THEREBY ESTABLISHING INTIMATE CONTACT BETWEEN SAID SUBSTRATE AND POLYCRYSTALLINE SILICON LAYER, AND RAISING THE TEMPERATURE OF SAID SUBSTRATE AND POLYCRYSTALLINE SILICON LAYER TO A RANGE OF 600*C TO 900*C FOR CONVERTING SAID POLYCRYSTALLINE SILICON AMORPHOUS LAYER TO A MONOCRYSTALLINE SILICON LAYER.
Claim 2
Independent Claim
153 words
A METHOD FOR FORMING A THIN LAYER OF MONOCRYSTALLINE SILICON ATOP A SUPPORTING MONOCRYSTALLINE SILICON SUBSTRATE COMPRISING THE STEPS OF, PROVIDING A MONOCRYSTALLINE SILICON SUBSTRATE, SAID SUBSTRATE HAVING A THIN OXIDE LAYER ON ITS UPPER SURFACE, DEPOSITING A POLYCRYSTALLINE SILICON AMORPHOUS LAYER ATOP THE THIN OXIDE LAYER ON SAID MONOCRYSTALLINE SILICON SUBSTRATE AT A TEMPERATURE LYING WITHIN THE RANGE OF 500*C TO 600*C, THEREBY FORMING AN INTERFACE INCLUDING THE THIN OXIDE LAYER BETWEEN SAID MONOCRYSTALLINE SUBSTRATE AND SAID POLYCRYSTALLINE SILICON LAYER, IMPLANTING IONS THROUGH SAID POLYCRYSTALLINE SILICON LAYER INTO SAID SUBSTRATE TO A SUFFICIENT EXTENT TO DAMAGE THE INTERFACE INCLUDING THE THIN OXIDE LAYER BETWEEN SAID SUBSTRATE AND SAID POLYCRYSTALLINE SILICON LAYER, THEREBY ESTABLISHING INTIMATE CONTACT BETWEEN SAID SUBSTRATE AND POLYCRYSTALLINE SILICON LAYER, AND RAISING THE TEMPERATURE OF SAID SUBSTRATE AND POLYCRYSTALLINE SILICON LAYER TO A RANGE OF 600*C TO 900*C FOR CONVERTING SAID POLYCRYSTALLINE SILICON AMORPHOUS LAYER TO A MONOCRYSTALLINE SILICON LAYER.
Claim 3
Dependent Claim
42 words
The method of forming a thiN layer of monocrystalline material atop a supporting substrate as recited in claim 1 wherein the ions implanted into the supporting substrate are selected from the group of ions comprising; silicon, protons, He plus and N plus.
Claim 4
Dependent Claim
32 words
The process of claim 1 in which said polycrystalline silicon amorphous layer is deposited from a silane and a carrier gas at a temperature lying within the range of 500*C to 600*C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-08-18 | 1979-02-17 | 1979-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-08-18 | 1983-02-17 | 1983-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-08-18 | 1987-02-17 | 1987-08-19 | $7700.00 | Window Closed / Lapsed |