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US3775196A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of selectively diffusing carrier killers into integrated circuits utilizing polycrystalline regions

Assignee: Sony Corp
•
Filing: 1972-03-10
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Granted: 1973-11-27
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Expires: 1992-03-10
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Abstract

Abstract An integrated circuit and method of making same comprising substrate with one or more epitaxial layers containing active circuit elements, circuit element isolation being obtained by polycrystalline regions with a carrier killer diffused therein. One particular feature of the disclosure is a method of making integrated circuits including the step of diffusing gold selectively into a semiconductor substrate through a polycrystalline region of high diffusion velocity which surrounds at least one active circuit element in the substrate.

Inventors

  • 👤 K Wakamiya
  • 👤 I Kobayshi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 09:29
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10D84/40; H10D84/401; H10D84/403; H10P; H10P95/00; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/062; Y10S148/085; Y10S148/122; Y10S438/00; Y10S438/914; Y10S438/917; Y10S438/922; Y10S438/969

Claims Analysis

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References Cited (Backward Citations)

US3423647A Cited
US3475661A Cited
US3396456A Cited
US3440113A Cited
US3440114A Cited
US3645808A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-11-26 1977-05-28 1977-11-27 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-11-26 1981-05-28 1981-11-27 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-11-26 1985-05-28 1985-11-27 $7700.00 Window Closed / Lapsed

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