US3775196A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of selectively diffusing carrier killers into integrated circuits utilizing polycrystalline regions
Assignee: Sony Corp
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Filing: 1972-03-10
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Granted: 1973-11-27
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Expires: 1992-03-10
Abstract
Abstract An integrated circuit and method of making same comprising substrate with one or more epitaxial layers containing active circuit elements, circuit element isolation being obtained by polycrystalline regions with a carrier killer diffused therein. One particular feature of the disclosure is a method of making integrated circuits including the step of diffusing gold selectively into a semiconductor substrate through a polycrystalline region of high diffusion velocity which surrounds at least one active circuit element in the substrate.
Inventors
- 👤 K Wakamiya
- 👤 I Kobayshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:29
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10D84/40; H10D84/401; H10D84/403; H10P; H10P95/00; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/062; Y10S148/085; Y10S148/122; Y10S438/00; Y10S438/914; Y10S438/917; Y10S438/922; Y10S438/969
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US3423647A
Cited
US3475661A
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US3396456A
Cited
US3440113A
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US3440114A
Cited
US3645808A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-11-26 | 1977-05-28 | 1977-11-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-11-26 | 1981-05-28 | 1981-11-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-11-26 | 1985-05-28 | 1985-11-27 | $7700.00 | Window Closed / Lapsed |