Patent US3897281A successfully refreshed from Google Patents.
US3897281A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for epitaxially growing a semiconductor material on a substrate from the liquid phase
Assignee: RCA Corp
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Filing: 1972-02-09
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Granted: 1975-07-29
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Expires: 1992-02-09
Abstract
Abstract A metal solvent is melted and a semiconductor material is added to the molten metal solvent when the metal solvent is at approximately the temperature at which the deposition is to start. When the semiconductor material is in the metal solvent long enough to allow enough of the semiconductor material to dissolve in the metal solvent to exactly saturate the metal solvent with the semiconductor material the substrate is brought into the solution. Other materials, such as conductivity modifiers and composition modifiers, may be added to each of the solutions either with the semiconductor material or during the deposition process. Apparatus comprises a boat having a plurality of spaced wells in its upper surface. A first slide for bringing a substrate into contact with molten material in the boat forms the floor of the boat wells. A second slide for adding materials (e.g. semiconductors and dopants) to molten material is spaced from the floor adjacent to but slightly below the top surface of the boat.
Inventors
- 👤 Stephen Lee Gilbert
- 👤 Michael Ettenberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:33
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/10; C30B19/106; C30B19/06; C30B19/063; Y; Y10; Y10S; Y10S252/00; Y10S252/95
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
99 words
A METHOD OF DEPOSITING ON A SUBSTRATE AN EPITAXIAL LAYER OF SINGLE CRYSTALLINE SEMICONDUCTOR MATERIAL COMPRISING THE STEPS OF: PROVIDING IN A BOAT THE SUBSTRATE, THE SEMICONDUCTOR MATERIAL, AND A CHARGE OF A SOLVENT FOR THE SEMICONDUCTOR MATERIAL WHICH CHARGE IS SEPARATED FROM AND BELOW THE SEMICONDUCTOR MATERIAL, PLACING THE BOAT IN MEANS FOR PROVIDING A CONTROLLED ATMOSPHERE AND/OR AT A CONTROLLED TEMPERATURE, HEATING THE SOLVENT TO A TEMPERATURE AT WHICH THE SOLVENT IS MOLTEN AND THE SEMICONDUCTOR MATERIAL WILL DISSOLVE IS THE SOLVENT, DROPPING INTO THE MOLTEN SOLVENT, WITHOUT REMOVING THE BOAT FROM THE CONTROLLED ATMOSPHERE AND/OR TEMPERATURE
Claim 2
Independent Claim
99 words
A METHOD OF DEPOSITING ON A SUBSTRATE AN EPITAXIAL LAYER OF SINGLE CRYSTALLINE SEMICONDUCTOR MATERIAL COMPRISING THE STEPS OF: PROVIDING IN A BOAT THE SUBSTRATE, THE SEMICONDUCTOR MATERIAL, AND A CHARGE OF A SOLVENT FOR THE SEMICONDUCTOR MATERIAL WHICH CHARGE IS SEPARATED FROM AND BELOW THE SEMICONDUCTOR MATERIAL, PLACING THE BOAT IN MEANS FOR PROVIDING A CONTROLLED ATMOSPHERE AND/OR AT A CONTROLLED TEMPERATURE, HEATING THE SOLVENT TO A TEMPERATURE AT WHICH THE SOLVENT IS MOLTEN AND THE SEMICONDUCTOR MATERIAL WILL DISSOLVE IS THE SOLVENT, DROPPING INTO THE MOLTEN SOLVENT, WITHOUT REMOVING THE BOAT FROM THE CONTROLLED ATMOSPHERE AND/OR TEMPERATURE
Claim 3
Dependent Claim
25 words
The method in accordance with claim 1 including adding to the solvent a material for modifying the characteristics of the epitaxial layer to be deposited.
Claim 4
Dependent Claim
23 words
The method in accordance with claim 2 in which the modifying material is dropped into the molten solvent along with the semiconductor material.
Claim 5
Dependent Claim
23 words
The method in accordance with claim 2 in which the modifying material is dropped into the saturated solvent while it is being cooled.
Claim 6
Dependent Claim
135 words
The method in accordance with claim 1 in which a plurality of epitaxial layers of a semiconductor material are deposited in succession by heating a plurality of separate charges of a solvent for the semiconductor material to the temperature at which the solvent is molten and the semiconductor material will dissolve in the molten solvent, separately dropping a semiconductor material in each of the molten charges in succession to saturate each of the molten charges with the semiconductor material, bringing the substrate into each of the saturated molten charges in succession just after the semiconductor material is dropped in the respective molten charge, and while the substrate is in each of the saturated molten charges cooling the charge to deposit an epitaxial layer of the semiconductor material from the saturated molten charge on the substrate.
Claim 7
Dependent Claim
32 words
The method in accordance with claim 5 including adding to at least one of the charges a material for modifying the characteristics of the epitaxial layer to be deposited from said charge.
Claim 8
Dependent Claim
23 words
The method in accordance with claim 6 in which the modifying material is dropped into the molten charge along with the semiconductor material.
Claim 9
Dependent Claim
24 words
The method in accordance with claim 6 in which the modifying material is dropped into the saturated molten charge while it is being cooled.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-07-28 | 1979-01-27 | 1979-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-07-28 | 1983-01-27 | 1983-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-07-28 | 1987-01-27 | 1987-07-29 | $7700.00 | Window Closed / Lapsed |