Method of depositing an epitaxial semiconductor layer from the liquidphase
Abstract
Abstract ONE OR MORE EPITAXIAL LAYERS OF A SEMICONDUCTOR MATERIAL ARE DISPOSED ON A SUBSTRATE BY PROVIDING FOR EACH EPITAXIAL LAYER TO BE DEPOSITED A SEPARATE SOLUTION OF A SEMICONDUCTOR MATERIAL DISSOLVED IN A MOLTEN METAL SOLVENT WITH EACH SOLUTION BEING UNSATURATED WITH THE SEMICONDUCTOR MATERIAL, A BODY OF THE SEMICONDUCTOR MATERIAL IS BROUGHT INTO CONTACT WITH THE SOLUTION AND SOME OF THE BODY IS DISSOLVED IN THE SOLUTION SO AS TO EXACTLY SATURATE THE SOLUTION. THE BODY IS THEN REMOVED FROM THE EXA BROUGHT INTO CONTACT WITH THE SOLUTION AND THE SUBSTRATE COOLED TO DEPOSIT THE EPITAXIAL LAYER ON THE SUBSTRATE, TO DEPOSIT A PLURALITY OF EPITAXIAL LAYERS ON THE SUBSTRATE, THE SUBSTRATE IS SUCCESSIVELY BROUGHT INTO CONTACT WITH EACH SOLUTION WITH THE BODY OF SEMICONDUCTOR MATERIAL PRECEDING THE SUBSTRATE INTO EACH SOLUTION SO THAT EACH SOLUTION IS EXACTLY SATURATED WITH THE SEMICONDUCTOR MATERIAL WHEN THE SUBSTRATE IS BROUGHT INTO THE SOLUTION.
Inventors
- 👤 H Lockwood
- 👤 M Ettenberg
Bibliographic Details
Claims Analysis
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