Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
74 words
A multilayer wiring structure comprising: a semiconductor substrate; a first conductive layer formed with a first prescribed pattern over a major surface of said substrate, said layer including at least one vertically extending land portion; a second conductive layer, formed with a second prescribed pattern in contact with only at least one selected vertically extending land portion at a position above said substrate; and air spaces disposed between said conductive layers above said substrate.
Claim 2
Dependent Claim
74 words
A multilayer wiring structure comprising: a semiconductor substrate; a first conductive layer formed with a first prescribed pattern over a major surface of said substrate, said layer including at least one vertically extending land portion; a second conductive layer, formed with a second prescribed pattern in contact with only at least one selected vertically extending land portion at a position above said substrate; and air spaces disposed between said conductive layers above said substrate.
Claim 3
Dependent Claim
42 words
The multilayer wiring structure according to claim 1, wherein said substrate is a semiconductor plate formed with a plurality of circuit elements in the surface portion thereof, and said first conductive layer is at least partially connected electrically to said circuit elements.
Claim 4
Dependent Claim
38 words
The multilayer wiring structure according to claim 1, further comprising a third conductive layer, formed with a third prescribed pattern in contact only through vertical stanchion portions with at least one selected portion of said second conductive layer.
Claim 5
Dependent Claim
31 words
The multilayer wiring structure according to claim 1, further including a protective film disposed over each layer surface exposed in a direction substantiaLly perpendicular to the major surface of said substrate.
Claim 6
Dependent Claim
28 words
The multilayer wiring structure according to claim 4, wherein the conductor material is a gold - chromium alloy, while said protective film is made of a chromium oxide.
Claim 7
Dependent Claim
31 words
The multilayer wiring structure according to claim 4, wherein said protective film is a member selected from the group consisting of an alumina film, a resin film and a glass film.
Claim 8
Dependent Claim
28 words
The multilayer wiring structure according to claim 6, wherein a silicon dioxide film is further provided on the entire surface of said wiring structure having said protective film.
Claim 9
Dependent Claim
111 words
An air-insulated multilayer wiring structure for an integrated circuit comprising: a first wiring conductor layer having a predetermined pattern which is connected with predetermined regions on a substrate and which also extends on an insulating film provided on said substrate; wiring conductor stanchions which are made of a conductor and which are formed at predetermined positions on said first wiring conductor layer; a second wiring conductor layer of a predetermined pattern which is electrically and mechanically connected with only the upper surface of said each wiring conductor stanchion and which is parallel to said substrate and has substantially no level difference; and a protective film on the surface of said conductors.
Claim 10
Dependent Claim
111 words
An air-insulated multilayer wiring structure for an integrated circuit comprising: a first wiring conductor layer having a predetermined pattern which is connected with predetermined regions on a substrate and which also extends on an insulating film provided on said substrate; wiring conductor stanchions which are made of a conductor and which are formed at predetermined positions on said first wiring conductor layer; a second wiring conductor layer of a predetermined pattern which is electrically and mechanically connected with only the upper surface of said each wiring conductor stanchion and which is parallel to said substrate and has substantially no level difference; and a protective film on the surface of said conductors.
Claim 11
Dependent Claim
59 words
The multilayer wiring structure according to claim 8, comprising at least one composite layer consisting of wiring conductor stanchions and a wiring conductor layer, said composite layer being similarly constructed to said wiring conductor stanchions and said second wiring conductor layer which are provided on said first wiring conductor layer and being provided on said second wiring conductor layer.
Claim 12
Dependent Claim
30 words
The multilayer wiring structure according to claim 8, wherein said protective film is a member selected from the group consisting of an alumina film, a resin and a glass film.
Claim 13
Dependent Claim
28 words
The multilayer wiring structure according to claim 8, wherein the conductor material is a gold - chromium alloy, while said protective film is made of a chromium oxide.
Claim 14
Dependent Claim
28 words
The multilayer wiring structure according to claim 8, wherein a silicon dioxide film is further provided on the entire surface of said wiring structure having said protective film.
Claim 15
Dependent Claim
33 words
The multilayer wiring structure according to claim 8, wherein the conductor material is composed of at least one element selected from the group consisting of Al, Au, Mo, Ni, Cu, Pt and Ti.
Claim 16
Dependent Claim
31 words
The multilayer wiring structure according to claim 8, wherein said first wiring conductor layer is composed of a three-layer structure of molybdenum-gold-molybdenum, and said wiring conductor stanchions are composed of aluminum.
Claim 17
Dependent Claim
22 words
The multilayer wiring structure according to claim 8, wherein the conductor material is aluminum, and said protective film is made of alumina.
Claim 18
Dependent Claim
21 words
The multilayer wiring structure according to claim 8, wherein the thickness of said wiring conductor layers is larger than their width.
Claim 19
Dependent Claim
138 words
A multilayer wiring structure comprising: a semiconductor substrate; a first layer of insulating material selectively formed on the surface of said substrate; a first conductive layer selectively formed on said first layer of insulating material, at least one portion thereof being disposed in contact with a surface portion of said substrate which is not covered with said first layer of insulating material; at least one first conductive stanchion selectively disposed on said first conductive layer and extending therefrom to a prescribed height above said first conductive layer; a second conductive layer disposed in contact with only the upper surface of said at least one first conductive stanchion, a portion of said second conductive layer extending in a direction substantially parallel to the surface of said substrate; and an air space disposed between said first and second conductive layers.
Claim 20
Dependent Claim
138 words
A multilayer wiring structure comprising: a semiconductor substrate; a first layer of insulating material selectively formed on the surface of said substrate; a first conductive layer selectively formed on said first layer of insulating material, at least one portion thereof being disposed in contact with a surface portion of said substrate which is not covered with said first layer of insulating material; at least one first conductive stanchion selectively disposed on said first conductive layer and extending therefrom to a prescribed height above said first conductive layer; a second conductive layer disposed in contact with only the upper surface of said at least one first conductive stanchion, a portion of said second conductive layer extending in a direction substantially parallel to the surface of said substrate; and an air space disposed between said first and second conductive layers.
Claim 21
Dependent Claim
82 words
A multilayer wiring strUcture according to claim 17, further comprising at least one second conductive stanchion selectively disposed on said second conductive layer and extending therefrom to a predetermined height above said second conductive layer; a third conductive layer disposed in contact with only the upper surface of said at least one second conductive stanchion, said third conductive layer extending in a direction substantially parallel to said first conductive layer; and an air space disposed between said second and third conductive layers.
Claim 22
Dependent Claim
28 words
A multilayer wiring structure according to claim 17, wherein said first conductive stanchion includes a thin metal layer disposed directly on the surface of said first conductive layer.
Claim 23
Dependent Claim
32 words
A multilayer wiring structure according to claim 17, wherein the exposed surfaces of each of said conductive layers and said at least one stanchion is coated with a first protective insulative film.
Claim 24
Dependent Claim
18 words
A multilayer wiring structure according to claim 20, wherein said first protective insulative film is a glass film.
Claim 25
Dependent Claim
22 words
A multilayer wiring structure according to claim 20, further comprising a second protective insulative film formed on said first protective insulative film.
Claim 26
Dependent Claim
53 words
A multilayer wiring structure according to claim 17, further including a third conductive layer disposed in contact with only said at least one first conductive stanchions at a position between said first and second conductive layers, with an air space provided between said first and third and said second and third conductive layers.
Claim 27
Dependent Claim
155 words
A multilayer wiring structure comprising: a semiconductor substrate; a first layer of insulating material selectively formed on the surface of said substrate; at least one first conductive stanchion selectively disposed on said first layer of insulating material and extending therefrom to a prescribed height above said first layer of insulating material; a first conductive layer selectively formed on said first layer of insulating material and on said at least one first conductive stanchion, at least one portion of said first conductive layer being disposed in contact with a surface portion of said substrate which is not covered with said first layer of insulating material; a second conductive layer disposed in contact with only the upper surface of said first conductive layer on said at least one first conductive stanchion, and extending in a direction substantially in parallel with the surface of said substrate; and an air space disposed between said first and second conductive layers.
Claim 28
Dependent Claim
155 words
A multilayer wiring structure comprising: a semiconductor substrate; a first layer of insulating material selectively formed on the surface of said substrate; at least one first conductive stanchion selectively disposed on said first layer of insulating material and extending therefrom to a prescribed height above said first layer of insulating material; a first conductive layer selectively formed on said first layer of insulating material and on said at least one first conductive stanchion, at least one portion of said first conductive layer being disposed in contact with a surface portion of said substrate which is not covered with said first layer of insulating material; a second conductive layer disposed in contact with only the upper surface of said first conductive layer on said at least one first conductive stanchion, and extending in a direction substantially in parallel with the surface of said substrate; and an air space disposed between said first and second conductive layers.
Claim 29
Dependent Claim
75 words
A multilayer wiring structure according to claim 24 wherein a portion of said second conductive layer extends upwardly away from the surface of said substrate, and a third conductive layer is disposed in contact with only said upwardly extending portion of said second conductive layer, said third conductive layer extending in a direction substantially in parallel with the surface of said substrate, and an air space being provided between said second and third conductive layers.