Beam leads and method of fabrication

Claim 1

A method as in claim 1 wherein said photosensitive means is photoresist.

Claim 4

A method for fabricating beam leads on a semiconductor device comprising the steps of: a. providing a semiconductor wafer having a plurality of semiconductor devices being disposed thereon, each of said plurality of semiconductor devices having metal contacts contacting predetermined regions of said semiconductor device; b. scribing lines on said semiconductor wafer between predetermined ones of said semiconductor devices; c. depositing a first layer of photosensitive means for defining element images on said semiconductor device and photolithographically defining a plurality of element images in said first layer of photosensitive means; d. depositing a metal layer on said first layer of photosensitive means, said metal layer contacting said metal contacts adjacent said plurality of element images; e. depositing a second layer of photosensitive means for defining element images on predetermined areas of said metal layer to enable definition of a predetermined geometrical shape, having a predetermined depth; f. depositing metal leads on portions of said metal layer devoid of said second layer of photosensitive means; g. dissolving said second layer of photosensitive means; h. dissolving portions of said metal layer and said metal leads until said first layer of photosensitive means is exposed; and i. dissolving all of said first layer of photosensitive means.

Claim 10

A method for fabricating beam leads on a semiconductor device, comprising the steps of: a. providing a semiconductor wafer having a top, bottom, and side surfaces, said semiconductor wafer having a plurality of semiconductor devices being disposed upon said top surface thereof, each of said plurality of semiconductor devices having metal contacts, contacting given regions of said semiconductor device; b. scribing a line on said top surface of said semiconductor wafer, said scribed line aligned between given ones of said semiconductor devices; c. depositing a first layer of photosensitive means for defining element images on said top surface of said semiconductor wafer and photolithographically defining a plurality of element images in said layer of photosensitive means to enable contacting said metal contacts of said plurality of semiconductor devices; d. depositing a metal layer on said first layer of photosensitive means, said metal layer contacting said metal contacts adjacent to said plurality of element images; e. depositing a second layer of photosensitive means on a portion of said metal layer, said means for defining a given geometrical shape upon said metal layer; f. depositing metal leads on that portion of said metal layer devoid of said second layer of photosensitive means; g. dissolving said second layer of photosensitive means exposing said metal layer; h. dissolving portions of said metal layer and said metal leads until said first layer of photosensitive means is exposed; and i. dissolving all of said first layer of photosensitive means.

Claim 16

A method for using photolithographic techniques to fabricate beam leads on a semiconductor device, comprising the steps of: a. providing a semiconductor wafer having a top, bottom, and side surfaces, said semiconductor wafer having a plurality of semiconductor devices disposed on said top surface thereof, each of said semiconductor devices having metal contacts contacting predetermined regions of said semiconductor device; b. scribing a line in said top surface of said semiconductors wafer, said scribed line being disposed between predetermined ones of said plurality of semiconductor devices; c. depositing a protective layer upon said top surface of said semiconductor wafer; d. depositing a first layer of photosensitive means and photolithographically defining element images at given locations in said first layer of photosensitive means; e. removing portions of said Protective layer in the areas adjacent said defined element images exposing said metal contacts on said top surface of said semiconductor wafer; f. depositing a metal layer on said layer of photosensitive means, said metal layer contacting said metal contacts adjacent to said element images; g. depositing metal leads of given geometry upon said metal layer; h. dissolving portions of said metal layer and said metal leads exposing said first layer of photosensitive means; and i. dissolving said first layer of photosensitive means;