Patent US3888705A successfully refreshed from Google Patents.
US3888705A
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Vapor phase growth of groups iii-v compounds by hydrogen chloride transport of the elements
Assignee: National Aeronautics and Space Administration
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Filing: 1973-12-19
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Granted: 1975-06-10
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Expires: 1993-12-19
Abstract
Abstract A method of forming binary, ternary, and quaternary compounds derived from elements of Groups III-V wherein a hydrogen chloride-hydrogen carrier gas is separately contacted with the desired elements at elevated temperatures to provide the corresponding sub-chlorides, which are then transported to a reaction zone for final deposition of the respective elements on a single crystal substrate derived from one or more elements of Groups III-V, with the rate of flow of the carrier gas over each element being adjusted such that the elements are deposited on the substrate in sufficient amounts to provide the desired binary, ternary, or quaternary compound.
Inventors
- 👤 James C Administrator Fletcher
- 👤 Ramesh C Tyagi
- 👤 Jr William J Debnam
- 👤 Maxwell F Mcnear
- 👤 Roger K Crouch
- 👤 Roger A Breckenridge
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:32
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/056; Y10S148/065; Y10S148/067; Y10S148/072; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
207 words
A METHOD OF FORMING BINARY, TERNARY, AND QUATERNARY COMPOUNDS DERIVED FROM ELEMENTS OF GROUP III AND GROUP V, WHICH CONSISTS ESSENTIALLY OF THE STEPS OF: A. PASSING A CARRIER GAS CONSISTING OF HYDROGEN AND HYDROGEN CHLORIDE, CONTAINING 1% TO 10% OF HYDROGEN CHLORIDE BY VOLUME SEPARATELY OVER TWO TO FOUR ELEMENTS OF GROUP III AND GROUP V, AT LEAST ONE OF SAID ELEMENTS BEING A GROUP III ELEMENT AND ONE BEING A GROUP V ELEMENT, SAID ELEMENTS BEING IN SEPARATE TUBES AND KEPT AT A TEMPERATURE BELOW THEIR SUBLIMATION TEMPERATURE OR BOILING POINTS, BUT AT A TEMPERATURE SUFFICIENT FOR THEIR REACTION WITH THE HYDROGEN CHLORIDE, WHEREBY THE ELEMENTS COMBINE WITH THE HYDROGEN CHLORIDE TO FORM THE CORRESPONDING SUB-CHLORIDES SUCH THAT ESSENTIALLY NO UNREACTED HYDROGEN CHLORIDE REMAINS, AND B. TRANSPORTING THE SUB-CHLORIDES OBTAINED IN (A) TO A DEPOSITION ZONE CONTAINING A SINGLE CRYSTAL SUBSTRATE DERIVED FROM AT LEAST ONE GROUP III ELEMENT AND ONE GROUP V ELEMENT WHEREBY THE ELEMENTS DEPOSIT ON THE SUBSTRATE, WITH THE RATE OF FLOW OF CARRIER GAS OVER EACH OF THE ELEMENTS BEING ADJUSTED SO THAT THE ELEMENTS ARE DEPOSITED ON THE SUBSTRATE IN SUFFICIENT AMOUNTS TO PROVIDE A BINARY, TERNARY, OR QUATERNARY COMPOUND CONSISTING OF ELEMENTS OF GROUP III AND GROUP V.
Claim 2
Independent Claim
207 words
A METHOD OF FORMING BINARY, TERNARY, AND QUATERNARY COMPOUNDS DERIVED FROM ELEMENTS OF GROUP III AND GROUP V, WHICH CONSISTS ESSENTIALLY OF THE STEPS OF: A. PASSING A CARRIER GAS CONSISTING OF HYDROGEN AND HYDROGEN CHLORIDE, CONTAINING 1% TO 10% OF HYDROGEN CHLORIDE BY VOLUME SEPARATELY OVER TWO TO FOUR ELEMENTS OF GROUP III AND GROUP V, AT LEAST ONE OF SAID ELEMENTS BEING A GROUP III ELEMENT AND ONE BEING A GROUP V ELEMENT, SAID ELEMENTS BEING IN SEPARATE TUBES AND KEPT AT A TEMPERATURE BELOW THEIR SUBLIMATION TEMPERATURE OR BOILING POINTS, BUT AT A TEMPERATURE SUFFICIENT FOR THEIR REACTION WITH THE HYDROGEN CHLORIDE, WHEREBY THE ELEMENTS COMBINE WITH THE HYDROGEN CHLORIDE TO FORM THE CORRESPONDING SUB-CHLORIDES SUCH THAT ESSENTIALLY NO UNREACTED HYDROGEN CHLORIDE REMAINS, AND B. TRANSPORTING THE SUB-CHLORIDES OBTAINED IN (A) TO A DEPOSITION ZONE CONTAINING A SINGLE CRYSTAL SUBSTRATE DERIVED FROM AT LEAST ONE GROUP III ELEMENT AND ONE GROUP V ELEMENT WHEREBY THE ELEMENTS DEPOSIT ON THE SUBSTRATE, WITH THE RATE OF FLOW OF CARRIER GAS OVER EACH OF THE ELEMENTS BEING ADJUSTED SO THAT THE ELEMENTS ARE DEPOSITED ON THE SUBSTRATE IN SUFFICIENT AMOUNTS TO PROVIDE A BINARY, TERNARY, OR QUATERNARY COMPOUND CONSISTING OF ELEMENTS OF GROUP III AND GROUP V.
Claim 3
Dependent Claim
26 words
The method of claim 1 wherein the elements of Group III and Group V are selected from the group consisting of gallium, indium, arsenic, and phosphorous.
Claim 4
Dependent Claim
29 words
The method of claim 1 wherein the substrate is a gallium arsenide crystal oriented in the <100> direction and the carrier gas is passed separately over gallium and arsenic.
Claim 5
Dependent Claim
29 words
The method of claim 3 wherein the gallium is heated at a temperature between 650*C to 850*C and the arsenic is heated at a temperature between 400*C to 550*C.
Claim 6
Dependent Claim
24 words
The method of claim 1 wherein the volume of carrier gas flowing over each element in each source tube is below about 300 cc/min.
Claim 7
Dependent Claim
26 words
The method of claim 4 wherein the volume of carrier gas flowing over the gallium and arsenic in each source tube is below about 300 cc/min.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-06-09 | 1978-12-09 | 1979-06-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-06-09 | 1982-12-09 | 1983-06-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-06-09 | 1986-12-09 | 1987-06-10 | $7700.00 | Window Closed / Lapsed |