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US3865072A Expired / Lapsed US ⏱️ 0.0 years remaining

Apparatus for chemically depositing epitaxial layers on semiconductor substrates

Assignee: HLS IND
•
Filing: 1973-10-18
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Granted: 1975-02-11
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Expires: 1993-10-18
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Abstract

Abstract Apparatus for chemically depositing an epitaxial layer on semiconductor substrates in which the substrates are carried in pockets formed on the exterior wall of a rotating, cylindrical opaque susceptor. Infrared radiant heaters are disposed centrally within the susceptor to project radiant heat onto the inner cylindrical wall of the susceptor. Spaced radially outward from the susceptor and coaxially therewith is a porous, undulated wall. The undulations in the porous wall travel in the circumferential direction. A plenum wall is disposed radially outward from and concentric with the porous undulated wall. The porous undulated wall has micro filtrative capability. Carrier and diluent gases enter the plenum chamber defined by the plenum wall and pass through the porous undulating wall to produce a thorough mixing of the carrier and diluent gases and to provide a highly uniform flow of the carrier and diluent gases. Reactant gases enter through the plenum wall and are discharged by a vertically aligned gas ejection orifices located at the maximum radially outward amplitude of the undulation of the porous reaction wall. As the carrier and diluent gases leave the porous, undulating wall, they encounter the reactant gases to provide a mixture thereof. The mixture of gases contact the exposed surfaces of the rotating substrates, which are heated to the desired reaction temperature through the susceptor, for producing an epitaxial layer on the exposed surfaces of the substrates.

Inventors

  • 👤 Earl L Kirkman

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 18:17
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C30B25/08; C30B25/12

Claims Analysis

Total Claims: 24
Claim 1
Independent Claim 233 words
Apparatus for depositing an epitaxial layer on substrates by the chemical vapor deposition of reactant gases and carrier and diluent gases on the exposed surface of the substrates, comprising: a. an outer wall defining a chamber; b. a susceptor disposed within said chamber, said susceptor being arranged to support substrates; c. a porous wall in said chamber disposed in the path of travel of the carrier and diluent gases for mixing the carrier and diluent gases advancing toward said susceptor, said porous wall defining one wall of a reaction chamber and confronting said susceptor; d. means external to said reaction chamber for conducting carrier and diluent gases toward said porous wall; e. means for supplying reactant gases to said reaction chamber; f. conduits in said reaction chamber communicating with said reactant gas supply means and having orifices disposed adjacent the gas-exiting surface of said porous wall for discharging reactant gases to mix with the mixed carrier and diluent gases, said mixed carrier and diluent gases and said reactant gases mix after the mixed carrier and diluent gases advance from the gas-exiting surface of said porous wall to form a mixture of gases contacting the exposed surfaces of the substrates; and g. a heater for heating said susceptor for effecting an epitaxial deposition on the exposed surfaces of the substrates in response to said mixture of gases contacting the exposed surfaces of the substrates.
Claim 2
Dependent Claim 233 words
Apparatus for depositing an epitaxial layer on substrates by the chemical vapor deposition of reactant gases and carrier and diluent gases on the exposed surface of the substrates, comprising: a. an outer wall defining a chamber; b. a susceptor disposed within said chamber, said susceptor being arranged to support substrates; c. a porous wall in said chamber disposed in the path of travel of the carrier and diluent gases for mixing the carrier and diluent gases advancing toward said susceptor, said porous wall defining one wall of a reaction chamber and confronting said susceptor; d. means external to said reaction chamber for conducting carrier and diluent gases toward said porous wall; e. means for supplying reactant gases to said reaction chamber; f. conduits in said reaction chamber communicating with said reactant gas supply means and having orifices disposed adjacent the gas-exiting surface of said porous wall for discharging reactant gases to mix with the mixed carrier and diluent gases, said mixed carrier and diluent gases and said reactant gases mix after the mixed carrier and diluent gases advance from the gas-exiting surface of said porous wall to form a mixture of gases contacting the exposed surfaces of the substrates; and g. a heater for heating said susceptor for effecting an epitaxial deposition on the exposed surfaces of the substrates in response to said mixture of gases contacting the exposed surfaces of the substrates.
Claim 3
Dependent Claim 12 words
Apparatus as claimed in claim 1 wherein said porous wall is undulated.
Claim 4
Dependent Claim 61 words
Apparatus as claimed in claim 2 wherein said orifices are located in the vicinity of maximum radially outward amplitudes of said porous undulated wall for discharging reactant gases to mix with the carrier and diluent gases, said orifices eject said reactant gases in a direction perpendicular to the stream of flow of said carrier and diluent gases from said porous wall.
Claim 5
Dependent Claim 21 words
Apparatus as claimed in claim 3 wherein said porous wall has a cylindrical configuration with the undulations thereof disposed circumferential therearound.
Claim 6
Dependent Claim 25 words
Apparatus as claimed in claim 4 wherein said susceptor has a cylindrical configuration with the axis thereof coincident with the axis of said porous wall.
Claim 7
Dependent Claim 25 words
Apparatus as claimed in claim 5 and comprising means for supporting said susceptor for rotation and means connected to said susceptor for rotating the same.
Claim 8
Dependent Claim 26 words
Apparatus as claimed in claim 1 and comprising means for supporting said susceptor for movement and means for moving said susceptor relative to said porous wall.
Claim 9
Dependent Claim 17 words
Apparatus as claimed in claim 5 wherein said heater is disposed along the axis of said susceptor.
Claim 10
Dependent Claim 12 words
Apparatus as claimed in claim 8 wherein said heater comprises infrared lamps.
Claim 11
Dependent Claim 36 words
Apparatus as claimed in claim 8 wherein said susceptor is formed with pockets at its outer cylindrical wall for the seating of substrates therein and wherein said heater heats the inner cylindrical wall of said susceptor.
Claim 12
Dependent Claim 22 words
Apparatus as claimed in claim 10 wherein said heater comprises infrared lamps and includes a transparent quartz tube surrounding the infrared lamps.
Claim 13
Dependent Claim 39 words
Apparatus as claimed in claim 1 and comprising a differential pressure operated damper for controlling reactor back pressure in said chamber, a motor for operating said damper and differential pressure sensing means for controlling the operation of saiD motor.
Claim 14
Dependent Claim 44 words
Apparatus as claimed in claim 1 wherein said susceptor is formed with openings to define a path for the flow of exhaust fumes to produce a uni-directional flow of gases in said chamber to control the extraction of particulate suspended in the gas stream.
Claim 15
Dependent Claim 33 words
Apparatus as claimed in claim 1 wherein said porous wall has a cylindrical configuration and said susceptor has a cylindrical configuration with the axis thereof coincident with the axis of said porous wall.
Claim 16
Dependent Claim 25 words
Apparatus as claimed in claim 14 and comprising means for supporting said susceptor for rotation and means connected to said susceptor for rotating the same.
Claim 17
Dependent Claim 26 words
Apparatus as claimed in claim 1 and comprising means for supporting said susceptor for movement and means for moving said susceptor relative to said porous wall.
Claim 18
Dependent Claim 17 words
Apparatus as claimed in claim 14 wherein said heater is disposed along the axis of said susceptor.
Claim 19
Dependent Claim 12 words
Apparatus as claimed in claim 17 wherein said heater comprises infrared lamps.
Claim 20
Dependent Claim 36 words
Apparatus as claimed in claim 17 wherein said susceptor is formed with pockets at its outer cylindrical wall for the seating of substrates therein and wherein said heater heats the inner cylindrical wall of said susceptor.
Claim 21
Dependent Claim 22 words
Apparatus as claimed in claim 19 wherein said heater comprises infrared lamps and includes a transparent quartz tube surrounding the infrared lamps.
Claim 22
Dependent Claim 32 words
Apparatus as claimed in claim 1 wherein said orifices eject said reactant gases in a direction perpendicular to the stream of flow of said carrier and diluent gases from said porous wall.
Claim 23
Dependent Claim 49 words
Apparatus as claimed in claim 14 wherein said conduits are disposed in a direction parallel to the axis of said porous wall and wherein said orifices eject said reactant gases in a direction perpendicular to the stream of flow of said carrier and diluent gases from said porous wall.
Claim 24
Dependent Claim 29 words
Apparatus as claimed in claim 1 wherein said porous wall is formed with a micron porosity for controlling the boundary layer at the gas-exiting surface of said porous wall.

References Cited (Backward Citations)

US3297501A Cited
US3460510A Cited
US3603284A Cited
US3672948A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-02-10 1978-08-12 1979-02-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-02-10 1982-08-12 1983-02-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-02-10 1986-08-12 1987-02-11 $7700.00 Window Closed / Lapsed

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