US3829880A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Schottky barrier plasma thyristor circuit
Assignee: Westinghouse Electric Corp
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Filing: 1973-01-05
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Granted: 1974-08-13
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Expires: 1993-01-05
Abstract
Abstract A plasma thyristor is provided for faster recycling of the plasma mode and sharper output signals. A silicon semiconductor body has a low impurity concentration preferably below 5 X 1014 atoms/cm3, has first and second opposed major surfaces, and preferably has a width of greater than about 80 microns. A first Schottky barrier contact is made at the first major surface. A second Schottky barrier or ohmic contact is made at the second major surface. Power sources apply (i) a reverse bias voltage across the first Schottky barrier contact between the contacts causing the carrier depletion field to extend from the first Schottky barrier contact the width of the body to the second contact, and (ii) a current pulse across the body between the contacts having a density greater than the saturation current density of the body. Preferably, the plasma thyristor is used to generate high power, fast rise-time electrical signals.
Inventors
- 👤 S Krishna
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:52
CPC Classifications
H; H10; H10D; H10D99/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
130 words
A plasma thyristor circuit comprising: a. a semiconductor body of greater than 80 microns in width having a low impurity concentration therethrough and having opposed major surfaces; b. separately opposed metal contacts affixed to the major surface of the body to form a Schottky barrier contact at at least one major surface; c. a bias power source electrically connected to the opposed metal contacts and capable of applying a reverse bias voltage across the body to cause a carrier depletion field to extend from the Schottky barrier contact reverse biased to the opposed metal contact; and d. a current power source electrically connected to the opposed metal contacts and capable of causing a current pulse through the body having a density greater than the saturation current density of the body.
Claim 2
Dependent Claim
130 words
A plasma thyristor circuit comprising: a. a semiconductor body of greater than 80 microns in width having a low impurity concentration therethrough and having opposed major surfaces; b. separately opposed metal contacts affixed to the major surface of the body to form a Schottky barrier contact at at least one major surface; c. a bias power source electrically connected to the opposed metal contacts and capable of applying a reverse bias voltage across the body to cause a carrier depletion field to extend from the Schottky barrier contact reverse biased to the opposed metal contact; and d. a current power source electrically connected to the opposed metal contacts and capable of causing a current pulse through the body having a density greater than the saturation current density of the body.
Claim 3
Dependent Claim
25 words
A plasma thyristor circuit as set forth in claim 1 wherein: the impurity concentration through the semiconductor body is less than 5 X 1014 atoms/cm3.
Claim 4
Dependent Claim
46 words
A plasma thyristor circuit as set forth in claim 1 comprising in addition: e. a matching circuit for processing output signals from the body electrically connected to the electrical contacts and having high ''''Q'''' impedance for balancing an impedance of the output signal from the body.
Claim 5
Dependent Claim
176 words
A plasma thyristor circuit comprising: a. a semiconductor body having opposed major surfaces and first and second impurity regions, said first impurity region being of greater than 80 microns in width and having a low impurity concentration therethrough, said second impurity region having a high impurity concentration therethrough, said impurity regions adjoining each other and each adjoining a separate major surface and each other and having the same conductivity type; b. separate opposed metal contacts affixed to the major surfaces of the body to form a Schottky barrier contact at at least the major surface adjoining the first impurity region; c. a bias power source electrically connected to the opposed metal contacts and capable of applying a reverse bias voltage across the body to cause a carrier depletion field to extend from the Schottky barrier contact to the second impurity region; and d. a current power source electrically connected to the opposed metal contacts and capable of causing a current pulse through the body having a density greater than the saturation current density of the body.
Claim 6
Dependent Claim
176 words
A plasma thyristor circuit comprising: a. a semiconductor body having opposed major surfaces and first and second impurity regions, said first impurity region being of greater than 80 microns in width and having a low impurity concentration therethrough, said second impurity region having a high impurity concentration therethrough, said impurity regions adjoining each other and each adjoining a separate major surface and each other and having the same conductivity type; b. separate opposed metal contacts affixed to the major surfaces of the body to form a Schottky barrier contact at at least the major surface adjoining the first impurity region; c. a bias power source electrically connected to the opposed metal contacts and capable of applying a reverse bias voltage across the body to cause a carrier depletion field to extend from the Schottky barrier contact to the second impurity region; and d. a current power source electrically connected to the opposed metal contacts and capable of causing a current pulse through the body having a density greater than the saturation current density of the body.
Claim 7
Dependent Claim
21 words
A plasma thyristor circuit as set forth in claim 1 wherein: the semiconductor body has a width greater than 150 microns.
Claim 8
Dependent Claim
37 words
A plasma thyristor circuit as set forth in claim 1 wherein: the current density of the current supplied by the current power source is more than 1.5 times greater than the saturation current density of the body.
Claim 9
Dependent Claim
23 words
A plasma thyristor circuit as set forth in claim 4 wherein: the width of the first impurity region is greater than 80 microns.
Claim 10
Dependent Claim
26 words
A plasma thyristor circuit as set forth in claim 4 wherein: the impurity concentration through the first impurity region is less than 5 X l014 atoms/cm3.
Claim 11
Dependent Claim
21 words
A plasma thyristor circuit as set forth in claim 4 wherein: the semiconductor body has a width greater than 150 microns.
Claim 12
Dependent Claim
37 words
A plasma thyristor circuit as set forth in claim 4 wherein: the current density of the current supplied by the current power source is more than 1.5 times greater than the saturation current density of the body.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-08-12 | 1978-02-11 | 1978-08-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-08-12 | 1982-02-11 | 1982-08-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-08-12 | 1986-02-11 | 1986-08-13 | $7700.00 | Window Closed / Lapsed |