US3599323A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hot carrier diode having low turn-on voltage
Assignee: Sprague Electric Co
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Filing: 1968-11-25
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Granted: 1971-08-17
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Expires: 1988-11-25
Abstract
Abstract A hot carrier diode is provided by depositing vaporized chromium onto a prepared P-type silicon surface. Current flow is by the Schottky emission of hot holes from silicon over the relatively low barrier at the chromium-silicon interface resulting in a device with a characteristically low turn-on voltage.
Inventors
- 👤 Arjun N Saxena
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 01:53
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; H10D; H10D64/00; H10D64/60; H10D64/64; Y; Y10; Y10S; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
55 words
The method of claim 1 wherein said cleaning of the exposed epitaxial layer surface consists of the following steps: (a) cleaning with trichlorethylene, acetone and deionized water, (b) blowing dry with N2, (c) etching with 10:1 hydrofluoric acid for 30 seconds at room temperature, (d) rinsing thoroughly with deionized water, (e) blowing dry with N2.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-16 | 1975-02-15 | 1975-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-16 | 1979-02-15 | 1979-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-16 | 1983-02-15 | 1983-08-17 | $7700.00 | Window Closed / Lapsed |