US3673514A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Schottky barrier transit time negative resistance diode circuits
Assignee: AT&T Inc
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Filing: 1970-12-31
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Granted: 1972-06-27
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Expires: 1990-12-31
Abstract
Abstract In a preferred form, a negative resistance diode comprises a semiconductor wafer contained between two Schottky barrier contacts. The diode is biased below avalanche breakdown, but above a critical ''''reach-through'''' voltage, which, with appropriate diode parameters and an appropriate external circuit, causes minority carriers to be injected by the forward-biased contact to give a transit time negative resistance. When used as an oscillator, the device gives a significantly lower noise figure than analogous Impatt diodes. Amplifier and voltage limiter embodiments are also described.
Inventors
- 👤 Donald James Coleman Jr
- 👤 Simon Min Sze
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 10:32
CPC Classifications
H; H03; H03B; H03B9/00; H03B9/12; H03B7/00; H03B7/02; H03B7/06; H10; H10D; H10D99/00
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
112 words
An electronic circuit comprising: a diode comprising a semiconductor wafer contained between first and second contacts; the diode containing two rectifying junctions, one of which is a Schottky barrier junction formed by the first contact and the wafer; said wafer being sufficiently thin that both the flat-band voltage and the reach-through voltage between the two rectifying junctions are smaller than the avalanche breakdown voltage; means for forward-biasing the Schottky barrier junction at a value between the reach-through voltage and the flat-band voltage; the minority carrier barrier of said forward-biased Schottky barrier junction being significantly smaller than one-half the band-gap energy of said wafer, thereby permitting diode conduction by copious minority carrier injection.
Claim 2
Dependent Claim
112 words
An electronic circuit comprising: a diode comprising a semiconductor wafer contained between first and second contacts; the diode containing two rectifying junctions, one of which is a Schottky barrier junction formed by the first contact and the wafer; said wafer being sufficiently thin that both the flat-band voltage and the reach-through voltage between the two rectifying junctions are smaller than the avalanche breakdown voltage; means for forward-biasing the Schottky barrier junction at a value between the reach-through voltage and the flat-band voltage; the minority carrier barrier of said forward-biased Schottky barrier junction being significantly smaller than one-half the band-gap energy of said wafer, thereby permitting diode conduction by copious minority carrier injection.
Claim 3
Dependent Claim
31 words
The electronic circuit of claim 1 wherein: said forward-biasing means, said diode, and said circuit are appropriately arranged such that the voltage in the wafer never reaches the avalanche breakdown voltage.
Claim 4
Dependent Claim
69 words
The electronic circuit of claim 2 wherein: the diode is included within a resonant circuit having a resonant frequency f; the transit time of minority carriers between said rectifying junctions is on the order of three-fourths of a period of oscillation at said resonant frequency f; and the biasing means includes a source of d-c energy, whereby the d-c energy is converted to oscillatory energy of said frequency f.
Claim 5
Dependent Claim
52 words
The electronic circuit of claim 2 wherein: the diode is forward-biased by a d-c source at a d-c voltage below the flat-band voltage, and is additionally forward-biased by a signal component, whereby said minority carrier injection occurs when the sum of the d-c component and the signal component exceeds the reach-through voltage.
Claim 6
Dependent Claim
31 words
The electronic circuit of claim 4 wherein: the diode shunts a signal propagating transmission line to a dissipative impedance, whereby the diode limits the signal voltage conducted by the transmission line.
Claim 7
Dependent Claim
52 words
The electronic circuit of claim 2 wherein: the majority carrier concentration of the wafer is significantly higher in a limited region immediately adjacent the Schottky barrier junction than in the remainder of the wafer, thereby permitting a relatively higher electric field in the remainder of the wafer to improve carrier transit efficiency.
Claim 8
Dependent Claim
113 words
A diode comprising: a semiconductor wafer contained between said first and second contacts; the diode containing two rectifying junctions, one of which is a Schottky barrier junction formed by the first contact and the wafer; said wafer being sufficiently thin that both the flat-band voltage and the reach-through voltage between the two rectifying junctions are smaller than the avalanche breakdown voltage; said Schottky barrier junction being adapted to be forward-biased at a value between reach-through voltage and the flat-band voltage; the minority carrier barrier of said Schottky barrier junction under said forward-bias condition being significantly smaller than one-half the band-gap energy of said wafer, thereby permitting diode conduction by copious minority carrier injection.
Claim 9
Dependent Claim
113 words
A diode comprising: a semiconductor wafer contained between said first and second contacts; the diode containing two rectifying junctions, one of which is a Schottky barrier junction formed by the first contact and the wafer; said wafer being sufficiently thin that both the flat-band voltage and the reach-through voltage between the two rectifying junctions are smaller than the avalanche breakdown voltage; said Schottky barrier junction being adapted to be forward-biased at a value between reach-through voltage and the flat-band voltage; the minority carrier barrier of said Schottky barrier junction under said forward-bias condition being significantly smaller than one-half the band-gap energy of said wafer, thereby permitting diode conduction by copious minority carrier injection.
References Cited (Backward Citations)
US3439290A
Cited
US3537021A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-27 | 1975-12-27 | 1976-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-27 | 1979-12-27 | 1980-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-27 | 1983-12-27 | 1984-06-27 | $7700.00 | Window Closed / Lapsed |