US3743967A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Stabilized trapatt oscillator diode
Assignee: Boeing Co
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Filing: 1972-03-16
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Granted: 1973-07-03
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Expires: 1992-03-16
Abstract
Abstract An avalanche diode having a P+NN+ or N+PP+ doping profile and operable in the TRAPATT mode, but wherein the impurity profile of the device is such as to prevent initiation of TRAPATT oscillations by IMPATT oscillations. In contrast to prior art TRAPATT devices, the diode is inherently stable since the IMPATT mechanism results in only a small internal negative resistance which is effectively canceled by the positive diode bulk resistance, spreading resistance of the device and external circuit resistance.
Inventors
- 👤 G Fitzsimmons
- 👤 Shuh Chen Wen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:35
CPC Classifications
H; H03; H03B; H03B9/00; H03B9/12
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
94 words
In an avalanche diode, the combination of a semiconductive body having a first region of one type conductivity, a second region of the other type conductivity, and a drift region intermediate the first and second regions and of lower impurity concentration than said first and second regions, said diode being operable in the TRAPATT mode but having an impurity profile such that no net negative resistance results at frequencies corresponding to the IMPATT mode of operation, whereby TRAPATT oscillations cannot be initiated by IMPATT oscillations but must be initiated by an external trigger source.
Claim 2
Dependent Claim
94 words
In an avalanche diode, the combination of a semiconductive body having a first region of one type conductivity, a second region of the other type conductivity, and a drift region intermediate the first and second regions and of lower impurity concentration than said first and second regions, said diode being operable in the TRAPATT mode but having an impurity profile such that no net negative resistance results at frequencies corresponding to the IMPATT mode of operation, whereby TRAPATT oscillations cannot be initiated by IMPATT oscillations but must be initiated by an external trigger source.
Claim 3
Dependent Claim
13 words
The combination of claim 1 wherein said diode has a P+NN+ impurity concentration.
Claim 4
Dependent Claim
13 words
The combination of claim 1 wherein said diode has an N+PP+ impurity profile.
Claim 5
Dependent Claim
44 words
The combination of claim 1 wherein said first and second regions have an impurity concentration of about 1018 atoms per cubic centimeter while said intermediate region which is 2.8 microns wide has a dopant concentration of about 2 X 1015 atoms per cubic centimeter.
Claim 6
Dependent Claim
33 words
The combination of claim 1 wherein said external trigger source comprises a source of radio-frequency energy having terminals adapted to be connected to said first and second regions through a non reciprocal element.
Claim 7
Dependent Claim
13 words
The combination of claim 5 wherein said non reciprocal element comprises circulator means.
Claim 8
Dependent Claim
33 words
The combination of claim 1 wherein said external trigger source comprises a source of transient direct current energy having terminals adapted to be connected to said first and second regions through a switch.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-07-02 | 1977-01-01 | 1977-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-07-02 | 1981-01-01 | 1981-07-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-07-02 | 1985-01-01 | 1985-07-03 | $7700.00 | Window Closed / Lapsed |