US3612914A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Avalanche diode circuits
Assignee: AT&T Inc
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Filing: 1970-08-25
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Granted: 1971-10-12
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Expires: 1990-08-25
Abstract
Abstract An avalanche diode of the type capable of generating Trapatt mode oscillations is used for generating extremely sharp output voltage spikes. An externally applied input pulse has a current density of JT> qvsN, where vs is the saturated drift velocity and N is the impurity concentration of majority carriers in the highresistance layer of the diode. The output spikes can be used for high speed gating, pulse regeneration, or harmonic generation.
Inventors
- 👤 William Joshua Evans
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:37
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/70; H03B; H03B9/00; H03B9/12; H03K3/00; H03K3/02; H03K3/313
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
152 words
An electronic wave translating circuit comprising a diode having first, second, and third crystalline semiconductor layers, the first and second layers forming a PN junction and the third layer being of relatively high conductivity, the second layer being of sufficiently small width that, when a sufficient reverse-bias voltage is applied to the junction to cause avalanche breakdown, an electric field extends the entire distance from the PN junction to the third layer; means for reverse-biasing the diode at a voltage below the avalanche breakdown voltage; and means comprising an external signal source for applying a current density JT substantially conforming to the relationship JT>qvsN where q is the charge on a majority carrier in the second layer, vs is the saturated drift velocity of carriers in the second layer and N is the net impurity concentration of the second layer, whereby the diode is capable of forming and propagating avalanche shock fronts.
Claim 2
Dependent Claim
152 words
An electronic wave translating circuit comprising a diode having first, second, and third crystalline semiconductor layers, the first and second layers forming a PN junction and the third layer being of relatively high conductivity, the second layer being of sufficiently small width that, when a sufficient reverse-bias voltage is applied to the junction to cause avalanche breakdown, an electric field extends the entire distance from the PN junction to the third layer; means for reverse-biasing the diode at a voltage below the avalanche breakdown voltage; and means comprising an external signal source for applying a current density JT substantially conforming to the relationship JT>qvsN where q is the charge on a majority carrier in the second layer, vs is the saturated drift velocity of carriers in the second layer and N is the net impurity concentration of the second layer, whereby the diode is capable of forming and propagating avalanche shock fronts.
Claim 3
Dependent Claim
73 words
The translating circuit of claim 1 wherein: the external signal source comprises a source of AC energy of a first frequency; and further comprising: a high-frequency output passband filter connected to the diode for passing only frequencies much higher than the first frequency; and a resonator connected to the passband filter having a resonant frequency much higher than that of the first frequency, whereby the electronic wave translating circuit constitutes a harmonic generator.
Claim 4
Dependent Claim
27 words
The translating circuit of claim 2 wherein: said diode is of a type which, when included in an appropriate circuit, is capable of supporting Trapatt mode oscillations.
Claim 5
Dependent Claim
38 words
The pulse current of claim 1 wherein: the signal source comprises a source of pulses to be regenerated; and output voltage spikes from the diode are transmitted to a load, whereby the translating circuit constitutes a pulse regenerator.
Claim 6
Dependent Claim
61 words
The electronic wave translating circuit of claim 1 further comprises: a transmission line for transmitting high-frequency current to be gated, said transmission line being connected to the diode; and wherein the signal source comprises a source of gate signals, for causing said diode to switch rapidly to a conducting condition, and thereby to transmit said high-frequency current from said transmission line.
Claim 7
Dependent Claim
39 words
The wave translating circuit of claim 5 wherein: the gate signal source comprises means for generating gating pulses each having a high-amplitude leading edge which is sufficient to trigger said avalanche shock front, and a lower amplitude trailing portion.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-10-11 | 1975-04-12 | 1975-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-10-11 | 1979-04-12 | 1979-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-10-11 | 1983-04-12 | 1983-10-12 | $7700.00 | Window Closed / Lapsed |