US3828232A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor target
Assignee: Toshiba Corp
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Filing: 1973-02-28
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Granted: 1974-08-06
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Expires: 1993-02-28
Abstract
Abstract A semiconductor target comprises a semiconductor substrate and a diode array patterned on the substrate. Diodes are isolated from each other by an insulating film. A p-n junction plane of the diodes is designed to lie over the boundary plane of the substrate and the insulating film.
Inventors
- 👤 Y Horiike
- 👤 S Shirouzu
- 👤 S Tsuji
- 👤 N Harada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 01:30
CPC Classifications
H; H10; H10P; H10P95/00; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/453; H01J29/455; H01J9/00; H01J9/20; H01J9/233; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/006; Y10S148/026; Y10S148/05; Y10S148/12; Y10S257/00; Y10S257/917
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
149 words
A semiconductor target comprising: a semiconductor substrate having one type of conductivity; an insulating layer in contact with and on a major surface of said substrate and which is provided with a plurality of holes; a first semiconductor region in said holes in contact with said substrate and having the same conductivity type as that of said substrate and a different impurity density from that of said substrate; a second semiconductor region in contact with said first semiconductor region and having an opposite type of conductivity as that of said substrate, wherein said boundary plane between said semiconductor substrate and said insulating layer and a boundary plane between said semiconductor region and said semiconductor substrate line in a same plane; wherein a p-n junction between said first and second semiconductor regions is formed over a plane which forms a boundary plane between said semiconductor substrate and said insulating film.
Claim 2
Dependent Claim
149 words
A semiconductor target comprising: a semiconductor substrate having one type of conductivity; an insulating layer in contact with and on a major surface of said substrate and which is provided with a plurality of holes; a first semiconductor region in said holes in contact with said substrate and having the same conductivity type as that of said substrate and a different impurity density from that of said substrate; a second semiconductor region in contact with said first semiconductor region and having an opposite type of conductivity as that of said substrate, wherein said boundary plane between said semiconductor substrate and said insulating layer and a boundary plane between said semiconductor region and said semiconductor substrate line in a same plane; wherein a p-n junction between said first and second semiconductor regions is formed over a plane which forms a boundary plane between said semiconductor substrate and said insulating film.
Claim 3
Dependent Claim
23 words
A semiconductor target according to claim 1, wherein an impurity density of said substrate is lighter than that of said first semiconductor region.
Claim 4
Dependent Claim
30 words
A semiconductor target according to claim 2 wherein said substrate includes impurity density means to prevent a formation of an inverted layer caused by a charge on said insulating layer.
Claim 5
Dependent Claim
45 words
A semiconductor target according to claim 1, wherein a third semiconductor with the same type conductivity as the semiconductor substrate is formed on a surface of the semiconductor substrate which is opposite a surface of the semiconductor substrate having the insulating layer in contact therewith.
Claim 6
Dependent Claim
134 words
A semiconductor target comprising: a semiconductor substrate having one type of conductivity; an insulating layer in contact with and on a major surface of said substrate and which is provided with a plurality of holes; a first semiconductor region in said holes in contact with said substrate and having the same conductivity type as that of said substrate and a different impurity density from that of said substrate; a second semiconductor region in contact with said first semiconductor region and having an opposite type of conductivity as that of said substrate, wherein a portion of said first semiconductor region is disposed beneath said insulating layer; whereby a p-n junction between the first and second semiconductor regions is formeD over a plane which forms a boundary plane between said semiconductor substrate and said insulating layer.
Claim 7
Dependent Claim
134 words
A semiconductor target comprising: a semiconductor substrate having one type of conductivity; an insulating layer in contact with and on a major surface of said substrate and which is provided with a plurality of holes; a first semiconductor region in said holes in contact with said substrate and having the same conductivity type as that of said substrate and a different impurity density from that of said substrate; a second semiconductor region in contact with said first semiconductor region and having an opposite type of conductivity as that of said substrate, wherein a portion of said first semiconductor region is disposed beneath said insulating layer; whereby a p-n junction between the first and second semiconductor regions is formeD over a plane which forms a boundary plane between said semiconductor substrate and said insulating layer.
Claim 8
Dependent Claim
24 words
A semiconductor target according to claim 5, wherein an impurity density of said first semiconductor region is heavier than that of said semiconductor substrate.
Claim 9
Dependent Claim
28 words
A semiconductor target according to claim 6, wherein said impurity density and the width of said first semiconductor region form a wide depletion layer in said semiconductor substrate.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-08-05 | 1978-02-04 | 1978-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-08-05 | 1982-02-04 | 1982-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-08-05 | 1986-02-04 | 1986-08-06 | $7700.00 | Window Closed / Lapsed |