Patent US3793712A successfully refreshed from Google Patents.
US3793712A
Expired / Lapsed
US
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Method of forming circuit components within a substrate
Assignee: Texas Instruments Inc
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Filing: 1965-02-26
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Granted: 1974-02-26
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Expires: 1985-02-26
Abstract
Abstract Disclosed is a method of etching a cavity in a semiconductor body and redepositing semiconductor material in the cavity formed thereby such that a uniform cavity is formed thereby allowing a uniform fill of semiconductor material resulting in a planar surface by use of a semiconductor body with a crystal orientation other than (111). Also is disclosed the structure formed by the method.
Inventors
- 👤 K Bean
- 👤 P Gleim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:32
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2924; H10P14/2925; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P95/00; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/05; Y10S148/085; Y10S148/115; Y10S148/122; Y10S438/00; Y10S438/973; Y10S438/977
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
115 words
In a method of fabricating a circuit component in one surface of a body of semiconductor material said surface having a crystal orientation other than the (111), the steps of: a. forming a mask upon said surface of said body of semiconductor material, thereby to expose a selected portion of said material, b. etching a predetermined amount of said selected portion of said material, whereby a pocket is formed within the body, said pocket having a regular etch profile and flat base, and c. epitaxially depositing a region of semiconductor material substantially within the pocket formed by said etching, the resultant epitaxial deposit a surface planar with said surface of said body of semiconductor material.
Claim 2
Dependent Claim
115 words
In a method of fabricating a circuit component in one surface of a body of semiconductor material said surface having a crystal orientation other than the (111), the steps of: a. forming a mask upon said surface of said body of semiconductor material, thereby to expose a selected portion of said material, b. etching a predetermined amount of said selected portion of said material, whereby a pocket is formed within the body, said pocket having a regular etch profile and flat base, and c. epitaxially depositing a region of semiconductor material substantially within the pocket formed by said etching, the resultant epitaxial deposit a surface planar with said surface of said body of semiconductor material.
Claim 3
Dependent Claim
135 words
In a method of fabricating a circuit component in one surface of a body of semiconductor material said surface having a crystal orientation other than the (111), the steps of: a. forming a mask upon said surface of said body of semiconducting material, thereby to expose a selected portion of said material, b. applying a vapor etch to said mask and said selected portion of said material for a period of time sufficient to remove a predetermined amount of said selected portion, whereby a pocket is formed within the body, said pocket having a regular etch profile and flat base, and c. epitaxially depositing a region of semiconductor material substantially within the space occupied by said removed material, the resultant epitaxial deposit having a surface planar with said surface of said body of semiconductor material.
Claim 4
Dependent Claim
135 words
In a method of fabricating a circuit component in one surface of a body of semiconductor material said surface having a crystal orientation other than the (111), the steps of: a. forming a mask upon said surface of said body of semiconducting material, thereby to expose a selected portion of said material, b. applying a vapor etch to said mask and said selected portion of said material for a period of time sufficient to remove a predetermined amount of said selected portion, whereby a pocket is formed within the body, said pocket having a regular etch profile and flat base, and c. epitaxially depositing a region of semiconductor material substantially within the space occupied by said removed material, the resultant epitaxial deposit having a surface planar with said surface of said body of semiconductor material.
Claim 5
Independent Claim
246 words
A method for fabricating individual circuit components within a semiconductor body, said components being electrically isolated from each other through the body, comprising the steps of: a. providing a wafer of low resistivity semiconductor material, the crystal orientation of a face of said wafer being other than the (111), b. forming a plurality of mesa regions upon said wafer face, c. forming a layer of insulating medium over each of said mesa regions, d. depositing a body of semiconductor material upon said wafer, thereby to completely cover the layers of said insulating medium, e. removing substantially all of the low resistivity semiconductor material except the portion which forms the mesa regions, f. forming a mask on said wafer face thereby to expose the surface of a selected portion of said low resistivity semiconductor material, g. etching a predetermined amount of said selected portion, whereby a pocket is formed within the unetched amount of said selected portion, said pocket having a regular etch profile and flat base, and said pocket having a side wall which together with said flat base are defined by said low resistivity semiconductor material, h. epitaxially depositing regions of high resistivity semiconductor material within the space previously occupied by said etched amount said regions of high resistivity each having a surface planar with said wafer face and being spaced from said insulating medium by said low resistivity semiconductor material, and i. forming individual circuit components within said regions of high resistivity semiconductor material.
Claim 6
Independent Claim
246 words
A method for fabricating individual circuit components within a semiconductor body, said components being electrically isolated from each other through the body, comprising the steps of: a. providing a wafer of low resistivity semiconductor material, the crystal orientation of a face of said wafer being other than the (111), b. forming a plurality of mesa regions upon said wafer face, c. forming a layer of insulating medium over each of said mesa regions, d. depositing a body of semiconductor material upon said wafer, thereby to completely cover the layers of said insulating medium, e. removing substantially all of the low resistivity semiconductor material except the portion which forms the mesa regions, f. forming a mask on said wafer face thereby to expose the surface of a selected portion of said low resistivity semiconductor material, g. etching a predetermined amount of said selected portion, whereby a pocket is formed within the unetched amount of said selected portion, said pocket having a regular etch profile and flat base, and said pocket having a side wall which together with said flat base are defined by said low resistivity semiconductor material, h. epitaxially depositing regions of high resistivity semiconductor material within the space previously occupied by said etched amount said regions of high resistivity each having a surface planar with said wafer face and being spaced from said insulating medium by said low resistivity semiconductor material, and i. forming individual circuit components within said regions of high resistivity semiconductor material.
Claim 7
Dependent Claim
121 words
In a method of fabricating a circuit component within a body of semiconductor material, comprising the steps of: forming a mask upon a surface of said body of semiconductor material oriented in the (100) plane, said mask having an aperture exposing a selected portion of said surface, applying an etch for said mask and said selected portion of said surface for a period of time sufficient to remove a predetermined amount of said selected portion, epitaxially depositing semiconductor material substantially within the space formed by the removal of said portion of material thereby producing a deposit having a surface planar with said surface of said body of semiconductor material and forming a circuit component within the deposited region of semiconductor material.
Claim 8
Dependent Claim
121 words
In a method of fabricating a circuit component within a body of semiconductor material, comprising the steps of: forming a mask upon a surface of said body of semiconductor material oriented in the (100) plane, said mask having an aperture exposing a selected portion of said surface, applying an etch for said mask and said selected portion of said surface for a period of time sufficient to remove a predetermined amount of said selected portion, epitaxially depositing semiconductor material substantially within the space formed by the removal of said portion of material thereby producing a deposit having a surface planar with said surface of said body of semiconductor material and forming a circuit component within the deposited region of semiconductor material.
Claim 9
Dependent Claim
120 words
In a method of fabricating a circuit component within a body of semiconductor material, comprising the steps of: forming a mask upon a surface of said body of semiconductor material oriented in the (110) plane, said mask having an aperture exposing a selected portion of said surface, applying an etch to said mask and said selected portion of said surface, for a period of time sufficient to remove a predetermined amount of said selected portion, epitaxially depositing semiconductor material substantially within the space formed by the removal of said portion of material thereby producing a deposit having a surface planar with said surface of said body of semiconductor material, forming a circuit component within said deposited region of semi-conductor material.
Claim 10
Dependent Claim
120 words
In a method of fabricating a circuit component within a body of semiconductor material, comprising the steps of: forming a mask upon a surface of said body of semiconductor material oriented in the (110) plane, said mask having an aperture exposing a selected portion of said surface, applying an etch to said mask and said selected portion of said surface, for a period of time sufficient to remove a predetermined amount of said selected portion, epitaxially depositing semiconductor material substantially within the space formed by the removal of said portion of material thereby producing a deposit having a surface planar with said surface of said body of semiconductor material, forming a circuit component within said deposited region of semi-conductor material.
Claim 11
Dependent Claim
125 words
In a method of fabricating a plurality of circuit components within a body of semiconductor material, comprising the steps of: forming a mask upon a surface of said body of semiconductor material oriented in the (100) plane, said mask having a plurality of apertures exposing selected portions of said surface, applying an etch to said mask and said selected portions of said surface for a period of time sufficient to remove a predetermined amount of said selected portions, epitaxially depositing semiconductor material substantially within the spaces formed by the removal of said portions of material thereby producing a deposit having a surface planar with said surface of said body of semiconductor material, forming a plurality of circuit components within said deposited regions of semiconductor material.
Claim 12
Dependent Claim
125 words
In a method of fabricating a plurality of circuit components within a body of semiconductor material, comprising the steps of: forming a mask upon a surface of said body of semiconductor material oriented in the (100) plane, said mask having a plurality of apertures exposing selected portions of said surface, applying an etch to said mask and said selected portions of said surface for a period of time sufficient to remove a predetermined amount of said selected portions, epitaxially depositing semiconductor material substantially within the spaces formed by the removal of said portions of material thereby producing a deposit having a surface planar with said surface of said body of semiconductor material, forming a plurality of circuit components within said deposited regions of semiconductor material.
Claim 13
Dependent Claim
126 words
In a method of fabricating a plurality of circuit components within a body of semiconductor material comprising the steps of: forming a mask upon a surface of said body of semiconductor material oriented in the (110) plane, said mask having a plurality of apertures exposing selected portions of said surface, applying an etch to said mask and said selected portions of said surface for a period of time sufficient to remove a predetermined amount of said selected portions, epitaxially depositing semiconductor material substantially within the spaces formed by the removal of said portions of material thereby producing a deposit having a surface planar with said surface of said body of semiconductor material, and forming a plurality of circuit components within said deposited regions of semiconductor material.
Claim 14
Dependent Claim
126 words
In a method of fabricating a plurality of circuit components within a body of semiconductor material comprising the steps of: forming a mask upon a surface of said body of semiconductor material oriented in the (110) plane, said mask having a plurality of apertures exposing selected portions of said surface, applying an etch to said mask and said selected portions of said surface for a period of time sufficient to remove a predetermined amount of said selected portions, epitaxially depositing semiconductor material substantially within the spaces formed by the removal of said portions of material thereby producing a deposit having a surface planar with said surface of said body of semiconductor material, and forming a plurality of circuit components within said deposited regions of semiconductor material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-02-25 | 1977-08-27 | 1978-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-02-25 | 1981-08-27 | 1982-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-02-25 | 1985-08-27 | 1986-02-26 | $7700.00 | Window Closed / Lapsed |