US3300832A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making composite insulatorsemiconductor wafer
Assignee: RCA Corp
•
Filing: 1963-06-28
•
Granted: 1967-01-31
•
Expires: 1983-06-28
Abstract
No abstract record available.
Inventors
- 👤 Eric F Cave
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 02:50
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/021; H10W10/10; H10W10/17; H10W10/20; H10W90/00; Y; Y10; Y10S; Y10S148/00; Y10S148/085; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
107 words
A METHOD OF MAKING A COMPOSITE, INSULATOR-SEMICONDUCTOR WAFER COMPRISING THE STEPS OF (A) FORMING A RELIEF PATTERN OF A PLURALITY OF MESAS IN A PORTION OF A WAFER OF SEMICONDU TOR MATERIAL THROUGH ONE SURFACE OF SAID WAFER OF SEMICONDUCTOR MATERIAL, (B) COVERING SAID RELIEF PATTERN WITH A LAYER OF AN INSULATING MATERIAL THAT SOFTENS WITH HEAT AND HAS SUBSTANTIALLY THE SAME COEFFICIENT OF EXPANSION AS THAT OF SAID SEMIDONDUCTOR MATERIAL, (C) HEATING SAID SEMICONDUCTOR MATERIAL AND SAID INSULATING MATERIAL UNTIL SAID INSULATING MATERIAL SOFTENS, (D) APPLYING PRESSURE BETWEEN SAID INSULATING MATERIAL AND SAID SEMICONDUCTOR MATERIAL WHEREBY TO PRESS SAID SOFTENED INSULATING MATERIAL INTO SAID RELEIF PATTERN,
Claim 2
Independent Claim
107 words
A METHOD OF MAKING A COMPOSITE, INSULATOR-SEMICONDUCTOR WAFER COMPRISING THE STEPS OF (A) FORMING A RELIEF PATTERN OF A PLURALITY OF MESAS IN A PORTION OF A WAFER OF SEMICONDU TOR MATERIAL THROUGH ONE SURFACE OF SAID WAFER OF SEMICONDUCTOR MATERIAL, (B) COVERING SAID RELIEF PATTERN WITH A LAYER OF AN INSULATING MATERIAL THAT SOFTENS WITH HEAT AND HAS SUBSTANTIALLY THE SAME COEFFICIENT OF EXPANSION AS THAT OF SAID SEMIDONDUCTOR MATERIAL, (C) HEATING SAID SEMICONDUCTOR MATERIAL AND SAID INSULATING MATERIAL UNTIL SAID INSULATING MATERIAL SOFTENS, (D) APPLYING PRESSURE BETWEEN SAID INSULATING MATERIAL AND SAID SEMICONDUCTOR MATERIAL WHEREBY TO PRESS SAID SOFTENED INSULATING MATERIAL INTO SAID RELEIF PATTERN,
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-01-30 | 1970-08-01 | 1971-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-01-30 | 1974-08-01 | 1975-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-01-30 | 1978-08-01 | 1979-01-31 | $7700.00 | Window Closed / Lapsed |