Abstract Thin epitaxial layers of material are grown on a substrate from a saturated solution of a solute dissolved in a metal solvent. The solute and solvent are first mixed and then heated to produce the saturated solution. The solution temperature is maintained while a suitable substrate is heated to and maintained at a temperature which is at least 5*C lower than that of the solution. The substrate is then brought into contact with the solution. Upon contact, a supersaturated condition is produced in the solution proximate to the substrate and a thin epitaxial layer of solute material grows on the substrate as the substrate and solution temperatures approach equilibrium. Layer growth continues until all the supersaturation in the solution is relieved or until the substrate and solution are physically separated.
The method of growing a thin epitaxial layer of gallium arsenide from a gallium solution on a gallium arsenide substrate comprising the steps of: a. heating the gallium solution to produce saturation; b. heating the gallium arsenide subsTrate to a temperature at least 5* lower than the temperature of the solution and up to 100*C lower than that of the solution; c. bringing the gallium arsenide substrate into contact with the saturated gallium solution for inducing a supersaturated condition in the solution proximate to the substrate, and initiating transient mode crystalline growth; and d. removing the substrate from the solution after a predetermined interval of time.
Claim 2
Dependent Claim
21 words
The method of claim 2 wherein the gallium arsenide substrate is between 50*C and 100*C cooler than the saturated gallium solution.
Claim 3
Dependent Claim
31 words
The method of claim 2 wherein the saturated gallium solution is about 800*C and the gallium arsenide substrate is initially at a temperature in the range of about 750* - 700*C.
Claim 4
Dependent Claim
19 words
The method of claim 4 wherein the substrate is removed from the solution after about 30 to 120 seconds.
Claim 5
Independent Claim
110 words
A method for growing a thin epitaxial layer of aluminum gallium arsenide onto a gallium arsenide substrate comprising the steps of: a. preparing a solution of gallium arsenide and aluminum in gallium; b. heating the solution to a temperature to produce saturation; c. heating the gallium arsenide substrate to a temperature at least 5*C lower than that of the saturated solution and up to 100*C lower than that of the solution; d. bringing the substrate into contact with the saturated solution for inducing a supersaturated condition proximate to the substrate, and initiating transient mode crystalline growth; and e. removing the substrate from the solution after a predetermined period of time.
Claim 6
Dependent Claim
23 words
The method of claim 6 wherein the temperature of said solution is about 800*C and the temperature of said substrate is about 750*C.
Claim 7
Dependent Claim
16 words
The method of claim 7 wherein the substrate is removed from the solution after 150 seconds.