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Method of making gallium arsenide semiconductive devices

Assignee: Varian Medical Systems Inc
•
Filing: 1971-01-28
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Granted: 1973-11-06
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Expires: 1991-01-28
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Abstract

Abstract Germanium is disclosed as a p-type dopant useful in gallium arsenide semiconductive devices such as varactors, IMPATT diodes, photocathodes, and the like. p-n junction gallium arsenide devices are fabricated by successively sliding a germanium doped melt of gallium arsenide in gallium and an n-doped melt of gallium arsenide in gallium over a gallium arsenide seed crystal for growing successive epitaxial p and n or n and p layers on the substrate while exposing the substrate to only one thermal cycle, whereby improved p-n junction devices are obtained.

Inventors

  • 👤 F Rosztoczy
  • 👤 C Casau
  • 👤 J Kinoshita

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 21:34
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/06; C30B19/063; H; H10; H10D; H10D99/00; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S252/00; Y10S252/95

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 28 words
The method of claim 1 wherein the substrate and charge material are raised to a temperature of about 740* C, before exposing the substrate to the charge melt.
Claim 2
Dependent Claim 66 words
The method of claim 1 wherein the GaAs substrate is doped with n type material, and is first exposed to the n type charge melt and then exposed to the p type charge melt containing the germanium p type dopant, causing the resulting device to have the p doped layer outer most and the n doped layer intermediate between the substrate and the p doped layer.

References Cited (Backward Citations)

US3551219A Cited
US3607463A Cited
US3565702A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-11-05 1977-05-07 1977-11-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-11-05 1981-05-07 1981-11-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-11-05 1985-05-07 1985-11-06 $7700.00 Window Closed / Lapsed

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