Method for growing tin-doped n-type epitaxial gallium arsenide from the liquid state
Abstract
Abstract A charge consisting of gallium, gallium arsenide, and tin was heated to produce a liquid molten solution of gallium, arsenic, and tin with the atom fraction of tin being below 80 percent in the solution. The charge and a gallium arsenide substance are preferably heated in a refractory boat contained within a hydrogen furnace tube, such boat being tilted at an angle such that the substrate wafer is above the liquid level of the solution. The boat is then tipped to cover the heated surface of the gallium arsenide substrate member with the liquified charge solution. The furnace is then allowed to cool, resulting in an epitaxial growth of tin-doped n-type gallium arsenide upon the gallium arsenide substrate member. Growth of the epitaxial layer occurs within a few minutes, after which the excess charge is scraped from the layer and the substrate member and is then treated with a solution of molten tin bromide to facilitate removal of the excess tin and gallium. The tin bromide and excess tin and gallium are removed from the epitaxial surface by treatment with hydrochloric acid. By varying the atom fraction of tin in the liquified solution, the net donor carrier concentration in the resultant epitaxial layer can be readily varied within the range from 1016 to 1018 per cubic centimeter.
Inventors
- 👤 Joshyo Kinoshita
- 👤 William W Stein
Bibliographic Details
Claims Analysis
Total Claims: 4References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-20 | 1975-03-22 | 1975-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-20 | 1979-03-22 | 1979-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-20 | 1983-03-22 | 1983-09-21 | $7700.00 | Window Closed / Lapsed |