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US3769560A Expired / Lapsed US ⏱️ 0.0 years remaining

Hermetic ceramic power package for high frequency solid state device

Assignee: Kyoto Ceramic Co Ltd
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Filing: 1972-09-18
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Granted: 1973-10-30
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Expires: 1992-09-18
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Abstract

Abstract This invention relates to a semiconductor device and more particularly to a semiconductor device increased in performance reliability by improving the fragility effected by heat and a lapse of time on the semiconductor device such as power transistor, Thyristor, Triac, etc.

Inventors

  • 👤 S Miyake
  • 👤 K Sakai

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 12:34
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/259; H10W40/70; H10W76/00; H10W76/10; H10W76/12; H10W76/13; H10W76/134; H10W72/00; H10W72/50; H10W72/541; H10W72/5445; H10W72/851; H10W72/874; H10W72/884; H10W74/00

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 236 words
In an hermetic power package for a high frequency solid state element employing a conductive stud the improvement comprising an insulating base of beryllium ceramics, said base being adapted to support said solid state element and fixedly secured to the top surface of said stud without an intervening discrete member, an insulating member of alumina ceramics separated from said insulating base and enclosing the outside of the base in a noncontacting manner, said insulating member having a thickness greater than that of the insulating base so that the top surface thereof extends above the top surface of said insulating base, said insulating member of alumina ceramic fixedly secured to the top surface of said stud of high purity copper without an intervening discrete member, an electrical conducting area formed on the top surface of said insulating member, an insulating housing of alumina ceramics formed integrally with said insulating member on the top surface thereof and in part over said electrical conducting area, said insulating housing configured to expose said electrical conducting area whereby said electrical conducting area passes through said integrally formed insulating member and insulating housing, and an air tight cap adapted to be hermetically sealed to said insulating housing whereby an hermetically sealed enclosure is formed by said insulating member, said insulating housing, said cap on said stud with said electrical conducting area enabling electrical interconnection to said solid state element in said enclosure.
Claim 2
Dependent Claim 236 words
In an hermetic power package for a high frequency solid state element employing a conductive stud the improvement comprising an insulating base of beryllium ceramics, said base being adapted to support said solid state element and fixedly secured to the top surface of said stud without an intervening discrete member, an insulating member of alumina ceramics separated from said insulating base and enclosing the outside of the base in a noncontacting manner, said insulating member having a thickness greater than that of the insulating base so that the top surface thereof extends above the top surface of said insulating base, said insulating member of alumina ceramic fixedly secured to the top surface of said stud of high purity copper without an intervening discrete member, an electrical conducting area formed on the top surface of said insulating member, an insulating housing of alumina ceramics formed integrally with said insulating member on the top surface thereof and in part over said electrical conducting area, said insulating housing configured to expose said electrical conducting area whereby said electrical conducting area passes through said integrally formed insulating member and insulating housing, and an air tight cap adapted to be hermetically sealed to said insulating housing whereby an hermetically sealed enclosure is formed by said insulating member, said insulating housing, said cap on said stud with said electrical conducting area enabling electrical interconnection to said solid state element in said enclosure.
Claim 3
Dependent Claim 75 words
The package defined in claim 1 wherein the width of the bottom surface of said insulating base is determined by extending angles at approximately 45 degrees respectively to the right and left sides from below the bottom edge of the semiconductor element located at a position approximately equal to the thickness of said insulating base whereby the conductivity of said insulating base is substantially utilized and said insulating base is maintained at a minimum dimension.
Claim 4
Dependent Claim 29 words
The package defined in claim 1 wherein said electrical conducting area is formed of a plurality of ringshaped areas made independent from each other by broken parts formed therebetween.
Claim 5
Dependent Claim 24 words
The package defined in claim 1 wherein said insulating base and said insulating member are fixedly attached to said stud by an Ag-Cu solder.
Claim 6
Dependent Claim 20 words
The package defined in claim 1 wherein said stud is copper and said solid state element is a semiconductor element.

References Cited (Backward Citations)

US3479570A Cited
US3651434A Cited
US3665592A Cited
US3626259A Cited
US3681513A Cited
US3659035A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-10-29 1977-04-30 1977-10-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-10-29 1981-04-30 1981-10-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-10-29 1985-04-30 1985-10-30 $7700.00 Window Closed / Lapsed

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