US3758797A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state bistable switching device and method
Assignee: Signetics Corp
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Filing: 1971-07-07
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Granted: 1973-09-11
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Expires: 1991-07-07
Abstract
Abstract Solid state bistable switching device having a semiconductor body with multiple dielectric layers carried by the semiconductor body and a metal electrode carried by the multiple dielectric layers with the device exhibiting diode-like characteristics with the forward direction occurring when the electrode is positive and a bistable switching characteristic between high and low conductive states when the electrode is reverse biased. In the method for fabricating a solid state bistable switching device, successive dielectric layers are formed on the body of semiconductor material and a metal electrode is formed on the dielectric layers. A negative potential is applied across the electrode to cause the device to assume a low conductivity state and then a signal in the form of electricity or light can be applied to the device to cause a predetermined threshold voltage to be exceeded to cause the device to switch from the low conductivity state to a high conductivity state.
Inventors
- 👤 D Peterson
- 👤 J Conragan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 06:00
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/20; H10N70/257; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/883; H10N70/8833
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
179 words
In a solid state bistable switching device, a semiconductor body having a surface, first and second dielectric layers disposed on said surface an electrode disposed on said second dielectric layer, and means for applying a voltage between the electrode and the semiconductor body to cause a current to flow continuously through said first and said second dielectric layers when a voltage is applied whereby when a voltage of one polarity is applied to the electrode, the device exhibits diode-like characteristics in the forward direction and when a potential of opposite polarity is applied to the electrode, the device exhibits a bistable switching characteristic between high and low current conductive states, said bistable switching characteristic being exhibited when a threshold value is reached, said device being in a low current conductive state when the potential of opposite polarity is applied until the threshold value is reached and a high current conductive state after the threshold value is reached, said device returning automatically to a ground state as soon as the voltage applied by said means applying a voltage is removed.
Claim 2
Dependent Claim
179 words
In a solid state bistable switching device, a semiconductor body having a surface, first and second dielectric layers disposed on said surface an electrode disposed on said second dielectric layer, and means for applying a voltage between the electrode and the semiconductor body to cause a current to flow continuously through said first and said second dielectric layers when a voltage is applied whereby when a voltage of one polarity is applied to the electrode, the device exhibits diode-like characteristics in the forward direction and when a potential of opposite polarity is applied to the electrode, the device exhibits a bistable switching characteristic between high and low current conductive states, said bistable switching characteristic being exhibited when a threshold value is reached, said device being in a low current conductive state when the potential of opposite polarity is applied until the threshold value is reached and a high current conductive state after the threshold value is reached, said device returning automatically to a ground state as soon as the voltage applied by said means applying a voltage is removed.
Claim 3
Dependent Claim
35 words
A device as in claim 1 wherein said semiconductor body is formed of silicon, wherein said first dielectric layer is formed of silicon dioxide and wherein said second dielectric layer is formed of tantalum oxide.
Claim 4
Dependent Claim
15 words
A device as in claim 2 wherein said semiconductor body is formed of N-type silicon.
Claim 5
Dependent Claim
28 words
A device as in claim 1 wherein said means for applying a voltage includes means for applying a voltage of opposite polarity which is below the threshold value.
Claim 6
Dependent Claim
28 words
A device as in claim 4 wherein said means for applying a signal voltage to the device which is sufficient to exceed the threshold voltage of the device.
Claim 7
Dependent Claim
39 words
A device as in claim 4 together with means for supplying illumination to the device to cause the threshold voltage to be exceeded and to cause the device to switch from a low conductive to a high conductive state.
Claim 8
Dependent Claim
21 words
A device as in claim 1 wherein said second dielectric layer has a high dielectric constant ranging from 20 to 100.
Claim 9
Dependent Claim
20 words
A device as in claim 1 wherein said second dielectric layer has a thickness ranging from 200 to 2000 Angstroms.
Claim 10
Dependent Claim
27 words
A device as in claim 1 together with an active circuit elemeNt formed in the semiconductor body and means coupling the active circuit element to the electrode.
Claim 11
Dependent Claim
187 words
In a method for providing a solid state bistable switching device, providing a semiconductor body having a surface forming a first dielectric layer disposed on said surface, forming a second dielectric layer disposed on said first dielectric layer, forming an electrode disposed on said second dielectric layer, applying a voltage between the electrode and the semiconductor body to cause a current to flow continuously through said first and said second dielectric layers when a voltage is applied whereby when a voltage of one polarity is applied to the electrode, the device exhibits diode-like characteristics in the forward direction and when a potential of opposite polarity is applied to the electrode, the device exhibits a bistable switching characteristic between high and low current conductive states, said bistable switching characteristic being exhibited when a threshold value is reached, said device being in a low current conductive state when the potential of opposite polarity is applied until the threshold value is reached and a high current conductive state after the threshold value is reached, said device returning automatically to a ground state as soon as the applied voltage is removed.
Claim 12
Dependent Claim
187 words
In a method for providing a solid state bistable switching device, providing a semiconductor body having a surface forming a first dielectric layer disposed on said surface, forming a second dielectric layer disposed on said first dielectric layer, forming an electrode disposed on said second dielectric layer, applying a voltage between the electrode and the semiconductor body to cause a current to flow continuously through said first and said second dielectric layers when a voltage is applied whereby when a voltage of one polarity is applied to the electrode, the device exhibits diode-like characteristics in the forward direction and when a potential of opposite polarity is applied to the electrode, the device exhibits a bistable switching characteristic between high and low current conductive states, said bistable switching characteristic being exhibited when a threshold value is reached, said device being in a low current conductive state when the potential of opposite polarity is applied until the threshold value is reached and a high current conductive state after the threshold value is reached, said device returning automatically to a ground state as soon as the applied voltage is removed.
Claim 13
Dependent Claim
12 words
A method as in claim 10 wherein said signal is a voltage.
Claim 14
Dependent Claim
15 words
A method as in claim 10 wherein said signal is in the form of light.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-09-10 | 1977-03-12 | 1977-09-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-09-10 | 1981-03-12 | 1981-09-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-09-10 | 1985-03-12 | 1985-09-11 | $7700.00 | Window Closed / Lapsed |