Patent US3753803A successfully refreshed from Google Patents.
US3753803A
Expired / Lapsed
US
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Method of dividing semiconductor layer into a plurality of isolated regions
Assignee: Hitachi Ltd
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Filing: 1969-12-04
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Granted: 1973-08-21
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Expires: 1989-12-04
Abstract
Abstract A method of isolation, comprising forming a semiconductor epitaxial layer on one surface of a semiconductor substrate, said epitaxial layer having a conductivity tape opposite to that of said semiconductor substrate, forming at least one groove in said epitaxial layer so that the groove extends to the surface of said semiconductor substrate to divide said epitaxial layer into a plurality of regions, and employing an epitaxial growth process to fill the groove with a semiconductor layer of the same conductivity type as the substrate thereby to divide said epitaxial layer into a plurality of electrically isolated regions.
Inventors
- 👤 Y Shimura
- 👤 H Sano
- 👤 M Nomura
- 👤 H Saida
- 👤 Y Ono
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 07:40
CPC Classifications
H; H10; H10W; H10W15/00; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10W10/00; H10W10/01; H10W10/031; H10W10/30; H10W15/01; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/05; Y10S148/085; Y10S148/151
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
55 words
A method according to claim 1, wherein the first conductivity type is P type and the second conductivity type is N type, and wherein said first opening has a width of from 50 Mu m to 500 Mu m and said second opening has a width of from 20 Mu m to 50 Mu m.
Claim 2
Dependent Claim
22 words
A method according to claim 1, wherein the insulator film is selected from the group consisting of silicon dioxide and silicon nitride.
Claim 3
Dependent Claim
44 words
A method according to claim 1, wherein the step of growing a semiconductor layer in the groove and the recess comprises heat treating the semiconductor substrate at a desired temperature and wherein said gas mixture consists of a semiconductor halide, hydrogen and hydrogen chloride.
Claim 4
Dependent Claim
38 words
A method according to claim 1, wherein the step of forming the opening in the insulator film comprises forming a plurality of first openings therein and a second opening surrounding all the first openings in the insulator film.
Claim 5
Dependent Claim
43 words
A method according to claim 1, wherein the step of forming the openings in the insulator film comprises forming a plurality of first openings and a plurality of second openings each of the sEcond openings surrounding a predetermined number of the first openings.
References Cited (Backward Citations)
US3210620A
Cited
US3210677A
Cited
US3243323A
Cited
US3394037A
Cited
US3426254A
Cited
US3456169A
Cited
US3370995A
Cited
US3425879A
Cited
US3419956A
Cited
US3500139A
Cited
US3566220A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-20 | 1977-02-19 | 1977-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-20 | 1981-02-19 | 1981-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-20 | 1985-02-19 | 1985-08-21 | $7700.00 | Window Closed / Lapsed |