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US3751687A Expired / Lapsed US ⏱️ 0.0 years remaining

Integrated semiconductor circuit for data storage

Assignee: International Business Machines Corp
•
Filing: 1971-06-30
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Granted: 1973-08-07
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Expires: 1991-06-30
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Abstract

Abstract A storage circuit for binary data designed for application in a functional memory. The circuit uses Schottky gate field effect transistors. It is arranged to enable layout on a very small surface area of a monolithic semiconductor crystal. The circuit is a modified bistable multivibrator in which the two transistors have one electrode in common. Decoupled connections are arranged at the end of the load resistors remote from the transistors.

Inventors

  • 👤 W Jutzi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 21:21
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/15; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/412; G11C15/00; G11C15/04; H10D; H10D84/00; H10D84/80; H10D84/811; H10W; H10W10/00; H10W10/01; H10W10/051; H10W10/50; H10W20/00; H10W20/40

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 139 words
An integrated semiconductor multivibrator circuit comprising: first and second field effect transistors each having source, drain and gate electrodes; said gate electrodes of said first and second transistor being cross-coupled to said drain electrodes; said source electrodes connected to a common ground line; first and second load resistors respectively connected to said first and second drain electrodes; first and second decoupling semiconductor devices respectively connected to said first and second load resistors; said first and second decoupling semiconductor devices connected to a common drive line; third and fourth decoupling semiconductor devices respectively connected to said first and second load resistors in common with said first and second decoupling semiconductor devices; first and second signal lines respectively connected to said third and fourth decoupling semiconductor devices; said first and second signal lines being orthogonal to said ground and drive lines.
Claim 2
Dependent Claim 139 words
An integrated semiconductor multivibrator circuit comprising: first and second field effect transistors each having source, drain and gate electrodes; said gate electrodes of said first and second transistor being cross-coupled to said drain electrodes; said source electrodes connected to a common ground line; first and second load resistors respectively connected to said first and second drain electrodes; first and second decoupling semiconductor devices respectively connected to said first and second load resistors; said first and second decoupling semiconductor devices connected to a common drive line; third and fourth decoupling semiconductor devices respectively connected to said first and second load resistors in common with said first and second decoupling semiconductor devices; first and second signal lines respectively connected to said third and fourth decoupling semiconductor devices; said first and second signal lines being orthogonal to said ground and drive lines.
Claim 3
Dependent Claim 41 words
The multivibrator as defined in claim 1 wherein the circuit is fabricated on a low conductivity substrate that is covered with a high conductivity layer, said circuit further comprising insulating zones between charge bearing areas that are formed by Schottky contacts.

References Cited (Backward Citations)

US3423737A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-08-06 1977-02-05 1977-08-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-08-06 1981-02-05 1981-08-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-08-06 1985-02-05 1985-08-07 $7700.00 Window Closed / Lapsed

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