Patent US3747201A successfully refreshed from Google Patents.
US3747201A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Magnetoresistance element and method of making the same
Assignee: Sony Corp
•
Filing: 1970-07-20
•
Granted: 1973-07-24
•
Expires: 1990-07-20
Abstract
Abstract A magnetoresistance element comprising a semiconductor wafer having a high resistivity and having a pair of junctions formed on one surface of the wafer which are capable of injecting carriers, a portion of reduced thickness formed on the other side of the wafer and a recombining area having a high rate of recombination formed in said reduced cross-sectional portion such that the element when subjected to a magnetic field exhibits a non-linear response. The method of making the element on the semiconductor wafer is also included.
Inventors
- 👤 M Arai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:39
CPC Classifications
H; H10; H10N; H10N50/00; H10N50/10; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
232 words
The method of forming a magnetoresistance element comprising: a. etching one surface of a semiconductor wafer of silicon to form a region having a low recombination rate; b. forming an insulating layer of silicon dioxide over said one surface of said silicon dioxide layer having a pair of windows separated by about 100 microns; c. forming a pair of junctions of opposite conductivity types in said wafer through said pair of windows; d. forming a pair of electrodes on said insulating layer which are electrically connected to said pair of junctions; e. forming a pair of bumps of electrical conducting material on said pair of electrodes and separated from each other more than 100 microns; f. forming a pair of electrical leads on a header of electrical insulating material; g. attaching said header to said semiconductor wafer by electrically insulating bonding material such that said electrical leads are respectively connected to said pair of pumps; h. forming a depression with a planar bottom in said semiconductor wafer on said second surface having a width of abOut 100 microns and such that said wafer in said depression has a thickness of 15 to 50 microns; and i. roughening the surface of said wafer in said depression to form a recombination region of high recombination rate and wherein steps (a), (b), (c), (d), (e), (g), (h) and (i) are performed in the order listed.
Claim 2
Independent Claim
232 words
The method of forming a magnetoresistance element comprising: a. etching one surface of a semiconductor wafer of silicon to form a region having a low recombination rate; b. forming an insulating layer of silicon dioxide over said one surface of said silicon dioxide layer having a pair of windows separated by about 100 microns; c. forming a pair of junctions of opposite conductivity types in said wafer through said pair of windows; d. forming a pair of electrodes on said insulating layer which are electrically connected to said pair of junctions; e. forming a pair of bumps of electrical conducting material on said pair of electrodes and separated from each other more than 100 microns; f. forming a pair of electrical leads on a header of electrical insulating material; g. attaching said header to said semiconductor wafer by electrically insulating bonding material such that said electrical leads are respectively connected to said pair of pumps; h. forming a depression with a planar bottom in said semiconductor wafer on said second surface having a width of abOut 100 microns and such that said wafer in said depression has a thickness of 15 to 50 microns; and i. roughening the surface of said wafer in said depression to form a recombination region of high recombination rate and wherein steps (a), (b), (c), (d), (e), (g), (h) and (i) are performed in the order listed.
Claim 3
Dependent Claim
35 words
The method of claim 1 comprising the steps of forming an additional window in said insulating layer between said pair of junctions and forming a channel stopper in said wafer between said pair of junctions.
Claim 4
Dependent Claim
17 words
In the method of claim 2 wherein said surface in the depression is roughened by sand blasting.
Claim 5
Dependent Claim
18 words
In the method of claim 2 wherein said surface in the depression is roughened by etching with ultrasonics.
Claim 6
Dependent Claim
32 words
In the method of claim 2 comprising supplying a voltage across said electrodes, and monitoring the voltage versus current characteristic of the magnetoresistance element as roughening occurs to obtain the desired characteristic.
References Cited (Backward Citations)
US3250693A
Cited
US3163568A
Cited
US3290192A
Cited
US3435379A
Cited
US3440502A
Cited
US3519899A
Cited
US3584377A
Cited
US3576392A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-07-23 | 1977-01-22 | 1977-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-07-23 | 1981-01-22 | 1981-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-07-23 | 1985-01-22 | 1985-07-24 | $7700.00 | Window Closed / Lapsed |