US3747201A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Magnetoresistance element and method of making the same
Assignee: Sony Corp
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Filing: 1970-07-20
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Granted: 1973-07-24
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Expires: 1990-07-20
Abstract
Abstract A magnetoresistance element comprising a semiconductor wafer having a high resistivity and having a pair of junctions formed on one surface of the wafer which are capable of injecting carriers, a portion of reduced thickness formed on the other side of the wafer and a recombining area having a high rate of recombination formed in said reduced cross-sectional portion such that the element when subjected to a magnetic field exhibits a non-linear response. The method of making the element on the semiconductor wafer is also included.
Inventors
- 👤 M Arai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 09:30
CPC Classifications
H; H10; H10N; H10N50/00; H10N50/10; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
232 words
The method of forming a magnetoresistance element comprising: a. etching one surface of a semiconductor wafer of silicon to form a region having a low recombination rate; b. forming an insulating layer of silicon dioxide over said one surface of said silicon dioxide layer having a pair of windows separated by about 100 microns; c. forming a pair of junctions of opposite conductivity types in said wafer through said pair of windows; d. forming a pair of electrodes on said insulating layer which are electrically connected to said pair of junctions; e. forming a pair of bumps of electrical conducting material on said pair of electrodes and separated from each other more than 100 microns; f. forming a pair of electrical leads on a header of electrical insulating material; g. attaching said header to said semiconductor wafer by electrically insulating bonding material such that said electrical leads are respectively connected to said pair of pumps; h. forming a depression with a planar bottom in said semiconductor wafer on said second surface having a width of abOut 100 microns and such that said wafer in said depression has a thickness of 15 to 50 microns; and i. roughening the surface of said wafer in said depression to form a recombination region of high recombination rate and wherein steps (a), (b), (c), (d), (e), (g), (h) and (i) are performed in the order listed.
Claim 2
Independent Claim
232 words
The method of forming a magnetoresistance element comprising: a. etching one surface of a semiconductor wafer of silicon to form a region having a low recombination rate; b. forming an insulating layer of silicon dioxide over said one surface of said silicon dioxide layer having a pair of windows separated by about 100 microns; c. forming a pair of junctions of opposite conductivity types in said wafer through said pair of windows; d. forming a pair of electrodes on said insulating layer which are electrically connected to said pair of junctions; e. forming a pair of bumps of electrical conducting material on said pair of electrodes and separated from each other more than 100 microns; f. forming a pair of electrical leads on a header of electrical insulating material; g. attaching said header to said semiconductor wafer by electrically insulating bonding material such that said electrical leads are respectively connected to said pair of pumps; h. forming a depression with a planar bottom in said semiconductor wafer on said second surface having a width of abOut 100 microns and such that said wafer in said depression has a thickness of 15 to 50 microns; and i. roughening the surface of said wafer in said depression to form a recombination region of high recombination rate and wherein steps (a), (b), (c), (d), (e), (g), (h) and (i) are performed in the order listed.
Claim 3
Dependent Claim
35 words
The method of claim 1 comprising the steps of forming an additional window in said insulating layer between said pair of junctions and forming a channel stopper in said wafer between said pair of junctions.
Claim 4
Dependent Claim
17 words
In the method of claim 2 wherein said surface in the depression is roughened by sand blasting.
Claim 5
Dependent Claim
18 words
In the method of claim 2 wherein said surface in the depression is roughened by etching with ultrasonics.
Claim 6
Dependent Claim
32 words
In the method of claim 2 comprising supplying a voltage across said electrodes, and monitoring the voltage versus current characteristic of the magnetoresistance element as roughening occurs to obtain the desired characteristic.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-07-23 | 1977-01-22 | 1977-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-07-23 | 1981-01-22 | 1981-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-07-23 | 1985-01-22 | 1985-07-24 | $7700.00 | Window Closed / Lapsed |