US3727115A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor electroluminescent diode comprising a ternary compound of gallium, thallium, and phosphorous
Assignee: International Business Machines Corp
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Filing: 1972-03-24
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Granted: 1973-04-10
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Expires: 1992-03-24
Abstract
Abstract A semiconductor electroluminescent diode, sometimes hereinafter referred to as a light emitting diode or simply LED, is a formed ternary compound of gallium, thallium and phosphorous. The diode is extremely versatile and has a variety of ambient temperature responsive operating characteristics which provide multiple light emitting characteristics. For example, at room temperature, i.e., 27*C, it emits light in the yellow bandwidth when forward biased and no light when reversed biased. At -196*C it has a bipolar characteristic. More specifically, at -196*C it has a discontinuous operating characteristic comprised of two portions when biased in the forward direction. In one portion, it emits light in the yellow bandwidth. In the other, it emits in the green bandwidth. When biased in the reverse direction and operating at the -196*C environment, it again exhibits a discontinuous operating characteristic having two portions and emits light in the yellow bandwidth in each portion.
Inventors
- 👤 D Shang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 01:36
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446; Y; Y10; Y10S; Y10S148/00; Y10S148/039; Y10S148/041; Y10S148/065; Y10S148/107; Y10S148/119; Y10S438/00; Y10S438/956
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
92 words
Semiconductor electroluminescent diode apparatus comprising: a semiconductor body of the ternary compound gallium, thallium and phosphorus, said body having a first region of a predetermined conductivity type, and a second region of opposite conductivity diffused in said first region, said first and second regions forming a PN junction therebetween; first and second electrode means in respective predetermined coupling relationships with said first and second regions, respectively, said PN junction emitting light therefrom with multiple light-emission characteristics in response to the volTage applied across said first and second electrode means the ambient temperature.
Claim 2
Dependent Claim
38 words
Diode apparatus according to claim 2 wherein at least one of said multiple light emission characteristics include selectable first and second different emission wavelengths at a predetermined temperature when said diode apparatus is biased in a given direction.
Claim 3
Dependent Claim
28 words
Diode apparatus according to claim 3 wherein said first and second emission wavelengths are 5,700 and 6,300 angstroms, respectively, and said predetermined direction is the forward bias direction.
Claim 4
Dependent Claim
53 words
Diode apparatus according to claim 2 wherein said diode apparatus further comprises a semiconductor substrate for supporting said first region, said first region being epitaxial solution grown thereon and said first electrode means being affixed to said substrate, said substrate providing said coupling relationship of said first electrode means to said first region.
Claim 5
Dependent Claim
20 words
Diode apparatus according to claim 2 wherein said first and second regions are of N and P conductivity types, respectively.
Claim 6
Dependent Claim
14 words
Diode apparatus according to claim 5 wherein said substrate is a gallium phosphorus compound.
Claim 7
Independent Claim
177 words
The method of making a semiconductor electroluminescent diode having multiple light-emission characteristics, said method comprising the steps of: providing an N-doped gallium phosphorus substrate with a predetermined tellurium dopant concentration; providing a mix with the ingredients of gallium, the alloy of gallium phosphorus, thallium, and an N-dopant of tellurium melted at a temperature of 1,100*C for approximately 10 minutes; thereafter cooling the melt to a temperature of 1,050*C at a rate of 1/2 *C per minute; thereafter emersing the substrate in the melt to epitaxial solution grow an N-region on a predetermined surface of said substrate by cooling the melt to a temperature of 990*C at a rate of 1/2 *C per minute; thereafter diffusing a P-region inwardly in the N-region by adding a sufficient quantity of zinc as a P-counter-dopant to the melt and thereafter cooling the melt to a temperature of 935*C at a rate of 1/2 *C per minute; thereafter removing the substrate and the resultant P and N regions formed thereon from the melt when the latter reaches the aforesaid temperature of 935*C.
Claim 8
Dependent Claim
25 words
The method according to claim 8 wherein the intermediate steps are performed in a forming gas atmosphere of 90 percent nitrogen and 10 percent hydrogen.
Claim 9
Dependent Claim
69 words
The method according to claim 8 wherein: the ratio of gallium and phosphorus in said substrate is 1:1; said tellurium dopant concentration in said substrate is 1 X 1018 per cc of gallium phosphorus; the ratio of said gallium and phosphorus in said alloy of said mix is 1:1; and the proportions of the gallium, gallium phosphorus alloy, thallium and tellurium dopant of said mix is: 20:3:0.5779: 0.020, respectively.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-04-09 | 1976-10-09 | 1977-04-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-04-09 | 1980-10-09 | 1981-04-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-04-09 | 1984-10-09 | 1985-04-10 | $7700.00 | Window Closed / Lapsed |