Patent US3437854A successfully refreshed from Google Patents.
US3667007A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor electron emitter
Assignee: RCA Corp
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Filing: 1970-02-25
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Granted: 1972-05-30
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Expires: 1990-02-25
Abstract
Abstract An electron emitter comprising a body of a semiconductor material which is adapted to generate light therein when properly biased but which is a poor absorber of the generated light. On a surface of the body is a thin region of a semiconductor material which is a good absorber of the generated light and which has an index of refraction which substantially matches the index of refraction of the material of the body. The thin semiconductor material region is adapted to absorb the light from the body and convert the light into free electrons. On the surface of the semiconductor material layer is a thin film of an electropositive work function reducing material which is adapted to emit the electrons formed in the semiconductor material layer.
Inventors
- 👤 Henry Kressel
- 👤 Jacques Isaac Pankove
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 09:21
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/30; H01J1/308
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
147 words
An electron emitting element comprising: a. a body of semiconductor material having adjacent P type and N type regions with a PN junction therebetween, the semiconductor material of said body being capable of generating light when the PN junction is properly biased and the semiconductor material of at least the P type region being AlxGa1 xAs b. a region of P type gallium arsenide on a surface of the P type region of the body and forming a heterojunction therebetween, said P type gallium arsenide region being a better absorber of light than the semiconductor material of the P type region of the body, c. a layer of an electropositive work function reducing material on the surface of the P type gallium arsenide, region, and d. a separate terminal connected to each of the P type gallium arsenide region and the N type region of the body.
Claim 2
Dependent Claim
147 words
An electron emitting element comprising: a. a body of semiconductor material having adjacent P type and N type regions with a PN junction therebetween, the semiconductor material of said body being capable of generating light when the PN junction is properly biased and the semiconductor material of at least the P type region being AlxGa1 xAs b. a region of P type gallium arsenide on a surface of the P type region of the body and forming a heterojunction therebetween, said P type gallium arsenide region being a better absorber of light than the semiconductor material of the P type region of the body, c. a layer of an electropositive work function reducing material on the surface of the P type gallium arsenide, region, and d. a separate terminal connected to each of the P type gallium arsenide region and the N type region of the body.
Claim 3
Dependent Claim
25 words
An electron emitting element in accordance with claim 1 in which the P type region of the body is at least 5 microns in thickness.
Claim 4
Dependent Claim
38 words
An electron emitting element in accordance with claim 1 in which the P type region of the body contains silicon as the conductivity modifier to lower the light absorption properties of the P type region of the body.
Claim 5
Dependent Claim
60 words
An electron emitting element in accordance with claim 1 in which the concentration of the aluminum in the P type region of the body varies from a minimum at the PN junction to a maximum at the heterojunction so that the band gap energy Of the P type region of the body increases from the PN junction to the heterojunction.
Claim 6
Dependent Claim
25 words
An electron emitting element in accordance with claim 1 in which the P type gallium arsenide region is between 1 and 5 microns in thickness.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-30 | 1975-11-29 | 1976-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-30 | 1979-11-29 | 1980-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-30 | 1983-11-29 | 1984-05-30 | $7700.00 | Window Closed / Lapsed |