US3673478A
Expired / Lapsed
US
⏱️ 0.0 years remaining
A semiconductor pellet fitted on a metal body
Assignee: Hitachi Ltd
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Filing: 1969-10-31
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Granted: 1972-06-27
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Expires: 1989-10-31
Abstract
Abstract A semiconductor device which includes a metal lead, a metal foil of gold or the like connected with the metal lead by way of a first intermediate alloy layer which is formed between the metal lead and the metal foil, and a semiconductor pellet fixed to the metal foil with a second intermediate alloy layer formed between the semiconductor material and the metal foil.
Inventors
- 👤 Hideru Osoegawa
- 👤 Katuel Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 16:49
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/50; H10W72/541; H10W72/5445; H10W72/851; H10W72/874; H10W72/884; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
157 words
A semiconductor device comprising a metal lead, a metal contact plate having first and second principal surfaces on said metal lead such that the first principal surface of the contact plate faces the surface of said metal lead, said contact plate having a region consisting principally of gold at least at the second principal surface thereof, said contact plate being connected at the first principal surface thereof with said metal lead by way of a first intermediate alloy layer essentially consisting of the alloy of said metal lead and of said contact plate, and a semiconductor pellet on the second principal surface of said contact plate and connected with said second principal surface by a second intermediate alloy layer formed from the metal of said region and the material of said pellet, said second intermediate alloy layer being distinct from said first intermediate alloy layer and being disposed between said pellet and said first intermediate alloy layer.
Claim 2
Dependent Claim
16 words
A semiconductor device according to claim 2, wherein said region essentially consists of gold and antimony.
Claim 3
Dependent Claim
25 words
A semiconductor deVice according to claim 3, wherein the pellet material is silicon and the second intermediate alloy layer essentially consists of a gold-silicon alloy.
Claim 4
Dependent Claim
19 words
A semiconductor device according to claim 4, wherein said metal lead includes nickel at least as a major component.
Claim 5
Dependent Claim
25 words
A semiconductor device according to claim 2, wherein the pellet material is silicon and the second intermediate alloy layer essentially consists of a gold-silicon alloy.
Claim 6
Dependent Claim
48 words
A semiconductor device according to claim 2, wherein the pellet material is silicon and the second intermediate alloy layer essentially consists of a gold-silicon alloy, said second intermediate alloy layer being separated from said first intermediate alloy layer by the remainder of said region consisting principally of gold.
References Cited (Backward Citations)
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US3172829A
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US3280387A
Cited
US3323956A
Cited
US3393091A
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US3323957A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-27 | 1975-12-27 | 1976-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-27 | 1979-12-27 | 1980-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-27 | 1983-12-27 | 1984-06-27 | $7700.00 | Window Closed / Lapsed |