Of an alloy to a support

Claim 1

IN THE MANUFACTURE OF A SEMICONDUCTOR DEVICE, A METHOD OF FORMING ON AN ELECTRICALLY-CONDUCTIVE SUBSTRATE AN ALLOY LAYER CONTAINING AT LEAST A FIRST CONSTITUENT HAVING A HIGHER MELTING POINT IN MAJOR AMOUNTS AND A SECOND CONSTITUENT HAVING A LOWER MELTIN POINT IN MINOR AMOUNTS, SAID ALLOY LAYER CONTAINING THE FIRST AND SECOND CONSTITUENTS IN CERTAIN DESIRED PROPORTIONS, COMPRISING THE STEPS OF PROVIDING ON THE SUBSTRATE A FIRST LAYER OF THE SAID MAJOR CONSTITUENT HAVING THE HIGHER MELTING POINT, PROVIDING ON THE FIRST LAYER A SECOND LAYER OF SAID MINOR CONSTITUENT IN AN AMOUNT IN EXCESS OF THAT REQUIRED FOR FORMING THE ALLOY OF DESIRED PROPORTIONS WITH THE FIRST LAYER, HEATING THE SAID LAYERS AT A TEMPERATURE BELOW THE SAID HIGHER MELTING POINT AND AT WHICH THE SECOND LAYER DIFFUSES INTO THE FIRST LAYER TO FORM A SOLID SOLUTION THEREWITH AND WITHOUT FORMING A MOLTEN PHASE, CONTINUING THE HEATING FOR A TIME AT WHICH SUFFICIENT OF THE MINOR CONSTITUENT IS DISSOLVED IN THE MAJOR CONSTITUENT TO FORM THE ALLOY OF DESIRED PROPORTIONS, AND THEREAFTER REMOVING THE EXCESS UNDISSOLVED MATERIAL OF THE SECOND LAYER LEAVING THE DESIRED ALLOY ON THE SUBSTRATE, AND THEREAFTER SECURING THE SUBSTRATE TO A SEMICONDUCTIVE BODY WITH THE DESIRED ALLOY IN CONTACT WITH A SURFACE OF THE SEMICONDUCTIVE BODY.