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US3619282A
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Method for vapor growing ternary compounds
Assignee: International Business Machines Corp
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Filing: 1968-09-27
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Granted: 1971-11-09
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Expires: 1988-09-27
Abstract
Abstract Ternary epitaxial films are grown from a gaseous mixture consisting of mercury, cadmium, and tellurium mixed with an inert or unreactive gas such as hydrogen. The mixture is heated to a temperature to prevent binary combinations and then rapidly cooled to the point of supersaturation by flowing the mixture through a thermal gradient having equithermal lines substantially parallel to the growth surface of a substrate.
Inventors
- 👤 Gerald W Manley
- 👤 Philip S Mcdermott
- 👤 Edward S Pan
- 👤 Ralph J Riley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 07:05
CPC Classifications
C; C30; C30B; C30B25/00; C30B23/00; C30B23/02; G; G03; G03B; G03B21/00; G03B21/54; G03B21/64; Y; Y10; Y10S; Y10S148/00; Y10S148/064
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
61 words
A method for vapor growing ternary epitaxial films in accordance with claim 1 in which said gaseous mixture is formed by adding each growth reactant gas to separate streams of said transport agent, followed by combining said streams into a common stream and flowing said stream through a mixing device to produce uniform distribution of said reactants in said transport agent.
Claim 2
Dependent Claim
36 words
A method for vapor growing ternary epitaxial films in accordance with claim 2 in which said heating to prevent binary combinations of said reactant gases is done concurrently with said mixing of said separate gas streams.
Claim 3
Dependent Claim
42 words
A method for vapor growing ternary epitaxial films in aCcordance with claim 1 in which said reactant gases consist of elemental mercury, cadmium, and tellurium and said transport agent is selected from a group consisting of hydrogen argon, or a mixture thereof.
Claim 4
Dependent Claim
56 words
A method for vapor growing ternary epitaxial films in accordance with claim 1 in which the cooling of said substrate and the heating of the region surrounding said substrate is done in a manner which produces a thermal gradient immediately above the growth surface of said substrate having equithermal lines substantially parallel with said growth surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-08 | 1975-05-10 | 1975-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-08 | 1979-05-10 | 1979-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-08 | 1983-05-10 | 1983-11-09 | $7700.00 | Window Closed / Lapsed |