Epitaxial growth of binary semiconductors
Abstract
Abstract 929,559. Coating by vapour deposition. WESTERN ELECTRIC CO. Inc. April 12, 1962 [July 5, 1961], No. 14118/62. Class 82. [Also in Group XXXVI] An epitaxial semi-conductor film of gallium arsenide or gallium phosphide is formed in a semi-conductor substrate by a vapour deposition process in an atmosphere of HC] while maintaining a thermal gradient between the substrate and the source material. In the case of the gallium arsenide the source should be at 550-1200‹ C. and the substrate at 500-1150‹ C. and the temperature gradient should be 10-100‹ C. For gallium phosphide the source should be at 750-1200‹ C., the substrate at 650-1100‹ C. and the temperature gradient 80-120‹ C. Examples are given of the deposition of n-type gallium arsenide on n-type gallium arsenide and on p-type germanium, of p-type gallium arsenide on n-type gallium phosphide and of n-type gallium phosphide on p-type gallium arsenide. The process is carried out in a reaction chamber 11 which contains the gallium arsenide or phosphide source 16 and the substrate 15. A heat sink 17 in the form of a silver wire conducts heat from the substrate and maintains the required thermal gradient. The reaction chamber is fitted with HCl gas and heated in a furnace 12.
Inventors
- 👤 Rupert R Moest
Bibliographic Details
Claims Analysis
Total Claims: 2References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-04-12 | 1968-10-12 | 1969-04-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-04-12 | 1972-10-12 | 1973-04-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-04-12 | 1976-10-12 | 1977-04-13 | $7700.00 | Window Closed / Lapsed |