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US3523223A Expired / Lapsed US ⏱️ 0.0 years remaining

Metal-semiconductor diodes having high breakdown voltage and low leakage and method of manufacturing

Assignee: Texas Instruments Inc
•
Filing: 1967-11-01
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Granted: 1970-08-04
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Expires: 1987-11-01
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Abstract

No abstract record available.

Inventors

  • 👤 Allan Harold Luxem
  • 👤 Constantinos Theodore Nicolaou

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 11:15
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10D; H10D99/00; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P95/00

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

US3271636A Cited
US3345222A Cited
US3328651A Cited
US3402044A Cited
US3366519A Cited
US3290570A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1973-08-03 1974-02-02 1974-08-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1977-08-03 1978-02-02 1978-08-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1981-08-03 1982-02-02 1982-08-04 $7700.00 Window Closed / Lapsed

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