US3271636A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallium arsenide semiconductor diode and method
Assignee: AT&T Inc
•
Filing: 1963-05-13
•
Granted: 1966-09-06
•
Expires: 1983-05-13
Abstract
No abstract record available.
Inventors
- 👤 John C Irvin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:14
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/854; H10D1/00; H10D1/60; H10D1/62; H10D99/00; H10P; H10P95/00
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
90 words
A HIGH FREQUENCY CAPACITIVE SEMICONDUCTOR DIODE COMPRISING A WAFER OF GALLIUM ARSENIDE SEMICONDUCTOR MATERIAL HAVING A RECTIFYING SURFACE BARRIER COMPRISING A THIN LAYER OF GOLD OF LIMITED EXTENT ON SAID WAFER SURFACE, AN ELEMENT OF SILVER IN CONTACT WITH SAID GOLD LAYER AND COEXTENSIVE THEREWITH SAID SILVER ELEMENT BEING IN LOW RESISTANCE ELECTRICAL CONTACT WITH SAID RECTIFYING SURFACE BARRIER WITH SUBSTANTIALLY NO PENETRATION OF SAID SURFACE BARRIER, A SECOND THIN LAYER OF GOLD OVERLYING SAID SILVER ELEMENT, AND A CONDUCTIVE MEMBER IN CONTACT WITH SAID SECOND THIN OVERLAYER OF GOLD.
References Cited (Backward Citations)
US3028663A
Cited
US3160539A
Cited
US3116174A
Cited
US3015048A
Cited
US3012175A
Cited
US3154450A
Cited
US3110849A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-09-05 | 1970-03-07 | 1970-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-09-05 | 1974-03-07 | 1974-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-09-05 | 1978-03-07 | 1978-09-06 | $7700.00 | Window Closed / Lapsed |