Contact for gallium arsenide
Abstract
Abstract 978,561. Transistors. TEXAS INSTRUMENTS Inc. Jan. 19, 1961 [Jan. 20, 1960], No. 2280/61. Heading H1K. A transistor comprises a body of gallium arsenide including a P-type region with a body of tin alloyed to it. A typical device is made by diffusing zinc into an N-type gallium arsenide wafer to form a thin P-type layer, etching to remove the layer except from the upper face, evaporating tin 33 and zinc-gold 34 on an adjacent region of the remainder of the layer 32 (Fig. 2c) and heating to 600-800‹ C. to form a PN junction between the tin and layer and an ohmic contact between the zinc-gold and the layer by alloying. The tin and zincgold and the immediately adjacent parts of the layer are then masked and the wafer etched to a mesa configuration. A tab is finally soldered to the wafer and wires thermocompression bonded to the tin and zinc-gold. Another type of NPN transistor is made by alloying tin 41, 42 (Fig. 3), and a ring base contact 44 of silver-zinc alloy to a wafer 43 of P-type gallium arsenide.
Inventors
- 👤 Morton E Jones
- 👤 Donald P Miller
- 👤 Ernest C Wurst
Bibliographic Details
Claims Analysis
Total Claims: 2References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-12-04 | 1965-06-05 | 1965-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-12-04 | 1969-06-05 | 1969-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-12-04 | 1973-06-05 | 1973-12-05 | $7700.00 | Window Closed / Lapsed |