Patent US3476593A successfully refreshed from Google Patents.
US3476593A
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Method of forming gallium arsenide films by vacuum deposition techniques
Assignee: Fairchild Semiconductor Corp
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Filing: 1967-01-24
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Granted: 1969-11-04
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Expires: 1987-01-24
Abstract
No abstract record available.
Inventors
- 👤 William I Lehrer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 16:30
CPC Classifications
C; C23; C23C; C23C14/00; C30; C30B; C30B23/00; C30B23/02; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/067; Y10S148/072; Y10S148/122; Y10S420/00; Y10S420/903; Y10S438/00; Y10S438/933; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12674; Y10T428/12681
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
CA727519A
Cited
US2938816A
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US3178313A
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US3197411A
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US3310425A
Cited
US3346414A
Cited
US3322501A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1972-11-03 | 1973-05-05 | 1973-11-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1976-11-03 | 1977-05-05 | 1977-11-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1980-11-03 | 1981-05-05 | 1981-11-04 | $7700.00 | Window Closed / Lapsed |