Abstract A layer of a semi-conducting compound composed of two elements, e.g. indium arsenide, is produced by directing separate vaporous streams of the elements on to a surface maintained at a temperature above the condensation temperature of the more volatile <PICT:0852598/III/1> element and below the condensation temperature of the compound and the less volatile element, the more volatile compound being in excess. The surface may be maintained at a temperature of 200 DEG C. for the production of indium arsenide. The jets may be of varying density in cross-section, decreasing in density from the centre towards the periphery, and may partially overlap (as shown), thus ensuring a desirable region in which the compound is obtained pure. This region may be cut out. The resulting layer may be heated at a temperature just below the m.p. of the compound in the vapour of the more readily volatile element at a pressure less than the v.p. of the solid element and greater than the partial v.p. of the element over the compound.
A METHOD FOR PRODUCING A THIN SEMICONDUCTOR LAYER OF SEMICONDUCTING COMPOUND WHOSE COMPONENTS, IN MOLTEN CONDITION, HAVE DIFFERENT VAPOR PRESSURES RESPECTIVELY, COMPRISING SIMULTANEOUSLY DIRECTING VAPOR BEAMS OF THE COMPONENTS ONTO A CARRIER SURFACE, THE CARRIER SURFACE BEING AT A TEMPERATURE BETWEEN THE CONDENSING TEMPERATURE OF THE COMPONENT OF HIGHER VOLATILITY, ON THE ONE HAND, AND THE CONDENSING TEMPERATURES OF THE COMPONENT OF LOWER VOLATILITY AND OF THE COMPOUND OF THE OTHER HAND, THE IMPINGING DENSITY OF THE VAPOR BEAM OF THE COMPONENT OF HIGHER VOLATILITY ON SAID SURFACE BEING SUCH AS TO MAINTAIN AT THE CARRIER SURFACE A STOICHIOMETRIC EXCESS OF THE COMPONENT OF HIGHER VOLATILITY.
Claim 2
Independent Claim
106 words
A METHOD FOR PRODUCING A THIN SEMICONDUCTOR LAYER OF SEMICONDUCTING COMPOUND WHOSE COMPONENTS, IN MOLTEN CONDITION, HAVE DIFFERENT VAPOR PRESSURES RESPECTIVELY, COMPRISING SIMULTANEOUSLY DIRECTING VAPOR BEAMS OF THE COMPONENTS ONTO A CARRIER SURFACE, THE CARRIER SURFACE BEING AT A TEMPERATURE BETWEEN THE CONDENSING TEMPERATURE OF THE COMPONENT OF HIGHER VOLATILITY, ON THE ONE HAND, AND THE CONDENSING TEMPERATURES OF THE COMPONENT OF LOWER VOLATILITY AND OF THE COMPOUND OF THE OTHER HAND, THE IMPINGING DENSITY OF THE VAPOR BEAM OF THE COMPONENT OF HIGHER VOLATILITY ON SAID SURFACE BEING SUCH AS TO MAINTAIN AT THE CARRIER SURFACE A STOICHIOMETRIC EXCESS OF THE COMPONENT OF HIGHER VOLATILITY.