Diode array and process for making same

Claim 1

A METHOD FOR MAKING SEMICONDUCTOR DEVICES COMPRISING THE STEPS OF: (A) PROVIDING A MONOCRYSTALLINE SEMICONDUCTOR BODY HAVING A PLURALITY OF GROOVES AT SELECTED FIRST LOCATIONS OF A SURFACE OF SAID BODY AND A PLURALITY OF LANDS OF SAID GROOVES AT SELECTED SECOND LOCATIONS OF SAID SURFACE, (B) DIFFUSING INTO SAID SURFACE FROM AN OXYGEN ATMOSPHERE CONTAINING PHOSPHORUS TO CHANGE SAID SURFACE TO N-TYPE CONDUCTIVITY AND FORM A DIFFUSION MASKING COATING OF OXIDE UPON SAID SURFACE, (C) SELECTIVELY REMOVING SAID DIFFUSION MASKING COATING OF OXIDE AND SAID CHANGED N-TYPE CONDUCTIVITY SURFACE FROM THE SAID LANDS OF SAID GROOVES, THEREBY TO LEAVE A PLURALITY OF FIRST DIFFUSED REGIONS OF N-TYPE CONDUCTIVITY AT SAID SELECTED FIRST LOCATIONS OF SAID SURFACE, EACH OF SAID PLURALITY OF FIRST DIFFUSED REGIONS EXTENDING TO SAID SURFACE BENEATH UNREMOVED OXIDE, (A) DIFFUSING BORON IMPURITIES INTO SAID LANDS TO FORM A PLURALITY OF SECOND DIFFUSED REGIONS OF P-TYPE CONDUCTIVITY ADJOINING THE SAID PLURALITY OF FIRST DIFFUSED REGIONS OF N-TYPE CONDUCTIVITY AT SAID SURFACE, AND (E) FORMING ANOTHER PLURALITY OF GROOVES AT SAID SURFACE PERPENDICULAR TO THE ORIGINAL GROOVES TO FORM A SERIES OF SEPARATED SURFACES ADJACENT JUNCTION DEVICES HAVING THEIR P-TYPE CONDUCTIVITY REGION IN JUXTAPOSITION WITH SAID N-TYPE CONDUCTIVITY REGION AT SAID SURFACE.

Claim 2

A METHOD FOR MAKING SEMICONDUCTOR DEVICES COMPRISING THE STEPS OF: (A) PROVIDING A MONOCRYSTALLINE SEMICONDUCTOR BODY HAVING A PLURALITY OF GROOVES AT SELECTED FIRST LOCATIONS OF A SURFACE OF SAID BODY AND A PLURALITY OF LANDS OF SAID GROOVES AT SELECTED SECOND LOCATIONS OF SAID SURFACE, (B) DIFFUSING INTO SAID SURFACE FROM AN OXYGEN ATMOSPHERE CONTAINING PHOSPHORUS TO CHANGE SAID SURFACE TO N-TYPE CONDUCTIVITY AND FORM A DIFFUSION MASKING COATING OF OXIDE UPON SAID SURFACE, (C) SELECTIVELY REMOVING SAID DIFFUSION MASKING COATING OF OXIDE AND SAID CHANGED N-TYPE CONDUCTIVITY SURFACE FROM THE SAID LANDS OF SAID GROOVES, THEREBY TO LEAVE A PLURALITY OF FIRST DIFFUSED REGIONS OF N-TYPE CONDUCTIVITY AT SAID SELECTED FIRST LOCATIONS OF SAID SURFACE, EACH OF SAID PLURALITY OF FIRST DIFFUSED REGIONS EXTENDING TO SAID SURFACE BENEATH UNREMOVED OXIDE, (A) DIFFUSING BORON IMPURITIES INTO SAID LANDS TO FORM A PLURALITY OF SECOND DIFFUSED REGIONS OF P-TYPE CONDUCTIVITY ADJOINING THE SAID PLURALITY OF FIRST DIFFUSED REGIONS OF N-TYPE CONDUCTIVITY AT SAID SURFACE, AND (E) FORMING ANOTHER PLURALITY OF GROOVES AT SAID SURFACE PERPENDICULAR TO THE ORIGINAL GROOVES TO FORM A SERIES OF SEPARATED SURFACES ADJACENT JUNCTION DEVICES HAVING THEIR P-TYPE CONDUCTIVITY REGION IN JUXTAPOSITION WITH SAID N-TYPE CONDUCTIVITY REGION AT SAID SURFACE.