US3122817A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of semiconductor devices
Assignee: AT&T Inc
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Filing: 1963-02-04
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Granted: 1964-03-03
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Expires: 1983-02-04
Abstract
No abstract record available.
Inventors
- 👤 Andrus Jules
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:44
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/35; C; C09; C09B; C09B67/00; C09B67/0071; C09B67/0072; D; D06; D06P; D06P1/00; D06P1/38; D06P1/382; H01; H01K; H01K1/00; H01K1/28; H01K1/32; H01K1/52; H01K1/54; H10; H10D; H10D99/00; H10P; H10P32/00; H10P32/10; H10P32/14; H10P76/00; H10P76/40; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
150 words
THE METHOD OF MAKING SEMICONDUCTOR DEVICES COMPRISING THE STEPS OF FORMING AN OXIDE COATING ON A SURFACE OF A SEMICONDUCTOR BODY, REMOVING SAID OXIDE COATING FROM A FIRST LIMITED AREA OF SAID SEMICONDUCTOR BODY THERBY EXPOSING SAID LIMITED SURFACE AREA, DIFFUSING INTO THE THUS EXPOSED LIMITED SURFACE AREA A FIRST IMPURITY FORMING WITHIN THE SEMICONDUCTOR BODY A P-N JUNCTION EXTENDING TO THE SEMICONDUCTOR SURFACE UNDERNEATH SAID COATING, REFORMING AN OXIDE COATING ON THE SEMICONDUCTOR SURFACE OVER SAID EXPOSED LIMITED SURFACE AREA, REMOVING FROM THE REFORMED OXIDE COATINGS A SECOND LIMITED AREA LESS THAN SAID FIRST LIMITED AREA THUS EXPOSING A SMALLER LIMITED SURFACE AREA OF THE SEMICONDUCTOR BODY THEREUNDER, AND DIFFUSING INTO SAID SMALLER LIMITED SURFACE AREA OF SAID SEMICONDUCTOR BODY A SECOND IMPURITY FORMING WITHIN THE SEMICONDUCTOR BODY BETWEEN THE PREVIOUSLY FORMED JUNCTION AND THE SUFRACE THEREOF ANOTHER P-N JUNCTION EXTENDING TO THE SEMICONDUCTOR SURFACE UNDERNEATH THE REFORMED COATING.
Claim 2
Independent Claim
150 words
THE METHOD OF MAKING SEMICONDUCTOR DEVICES COMPRISING THE STEPS OF FORMING AN OXIDE COATING ON A SURFACE OF A SEMICONDUCTOR BODY, REMOVING SAID OXIDE COATING FROM A FIRST LIMITED AREA OF SAID SEMICONDUCTOR BODY THERBY EXPOSING SAID LIMITED SURFACE AREA, DIFFUSING INTO THE THUS EXPOSED LIMITED SURFACE AREA A FIRST IMPURITY FORMING WITHIN THE SEMICONDUCTOR BODY A P-N JUNCTION EXTENDING TO THE SEMICONDUCTOR SURFACE UNDERNEATH SAID COATING, REFORMING AN OXIDE COATING ON THE SEMICONDUCTOR SURFACE OVER SAID EXPOSED LIMITED SURFACE AREA, REMOVING FROM THE REFORMED OXIDE COATINGS A SECOND LIMITED AREA LESS THAN SAID FIRST LIMITED AREA THUS EXPOSING A SMALLER LIMITED SURFACE AREA OF THE SEMICONDUCTOR BODY THEREUNDER, AND DIFFUSING INTO SAID SMALLER LIMITED SURFACE AREA OF SAID SEMICONDUCTOR BODY A SECOND IMPURITY FORMING WITHIN THE SEMICONDUCTOR BODY BETWEEN THE PREVIOUSLY FORMED JUNCTION AND THE SUFRACE THEREOF ANOTHER P-N JUNCTION EXTENDING TO THE SEMICONDUCTOR SURFACE UNDERNEATH THE REFORMED COATING.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-03-03 | 1967-09-02 | 1968-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-03-03 | 1971-09-02 | 1972-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-03-03 | 1975-09-02 | 1976-03-03 | $7700.00 | Window Closed / Lapsed |