Patent US3328199A successfully refreshed from Google Patents.
US3328199A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing monocrystalline silicon of high purity
Assignee: Siemens and Halske AG
•
Filing: 1963-09-16
•
Granted: 1967-06-27
•
Expires: 1983-09-16
Abstract
No abstract record available.
Inventors
- 👤 Sirtl Erhard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:30
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C01; C01B; C01B33/00; C01B33/02; C30B25/00; C30B25/02; Y; Y10; Y10S; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
119 words
THE METHOD OF GROWING HYPERPURE MONOCRYSTALLINE SILICON UPON A HEATED CARRIER OF SILICON BY PYROLYTIC DISSOCIATION FROM A REACTION GAS MIXTURE OF A HALOGEN SILANE AND PURE HYDROGEN IN A MOLAR RATIO OF HALOGEN SILANE TO HYDROGEN OF AT LEAST 0.02, WHICH COMPRISES HEATING THE CARRIER TO INCANDESCENT TEMPERATURE AND SUBJECTING THE HEATED CARRIER, PRIOR TO COMMENCING THE PROLYTIC DISSOCIATION OF SILICON, TO A GAS FLOW CONTAINING, IN ADDITION TO SAID MIXTURE OF HALOGEN SILANCE AND HYDROGEN, HYDROGEN CHLORIDE TO SHIFT THE REACTION EQUILIBRIUM IN DISFAVOR OF SILICON PRECIPITATION AND PREVENT DISSOCIATION OF SILICON AS WELL AS BORON; AND THEREAFTER REDUCING THE ADDITION OF SAID HYDROGEN CHLORIDE TO SAID GAS FLOW FOR PRECIPITATION OF SILICON UPON THE HEATED CARRIER.
Claim 2
Independent Claim
119 words
THE METHOD OF GROWING HYPERPURE MONOCRYSTALLINE SILICON UPON A HEATED CARRIER OF SILICON BY PYROLYTIC DISSOCIATION FROM A REACTION GAS MIXTURE OF A HALOGEN SILANE AND PURE HYDROGEN IN A MOLAR RATIO OF HALOGEN SILANE TO HYDROGEN OF AT LEAST 0.02, WHICH COMPRISES HEATING THE CARRIER TO INCANDESCENT TEMPERATURE AND SUBJECTING THE HEATED CARRIER, PRIOR TO COMMENCING THE PROLYTIC DISSOCIATION OF SILICON, TO A GAS FLOW CONTAINING, IN ADDITION TO SAID MIXTURE OF HALOGEN SILANCE AND HYDROGEN, HYDROGEN CHLORIDE TO SHIFT THE REACTION EQUILIBRIUM IN DISFAVOR OF SILICON PRECIPITATION AND PREVENT DISSOCIATION OF SILICON AS WELL AS BORON; AND THEREAFTER REDUCING THE ADDITION OF SAID HYDROGEN CHLORIDE TO SAID GAS FLOW FOR PRECIPITATION OF SILICON UPON THE HEATED CARRIER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-06-26 | 1970-12-26 | 1971-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-06-26 | 1974-12-26 | 1975-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-06-26 | 1978-12-26 | 1979-06-27 | $7700.00 | Window Closed / Lapsed |