US3212922A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Producing single crystal semiconducting silicon
Assignee: Siemens and Halske AG
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Filing: 1961-10-23
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Granted: 1965-10-19
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Expires: 1981-10-23
Abstract
No abstract record available.
Inventors
- 👤 Sirtl Erhard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 08:47
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C01; C01B; C01B33/00; C01B33/02; C30B25/00; C30B25/02
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
152 words
A METHOD OF PRODUCING COMPACT SILICON, WHEREIN A REACTION GAS CONTAINING A HALOGEN SILANE INTERMIXED WITH PURIFIED HYDROGEN IS CONDUCTED OVER A HEATED CARRIER BODY MADE OF SILICON, TO LIBERATE THE SILICON FROM THE REACTION GAS DUE TO THERMAL DECOMPOSITION, WHEREBY SUCH SILICON IS PRECIPITATED UPON THE CARRIER AND THUS GROWS THEREON, COMPRISING THE STEPS OF MAINTAINING THE SILICON AND HYDROGEN IN THE REACTION GAS IN A MOLECULAR RATIO OF SI TO H OF AT LEAST ABOUT 2 PERCENT AND BORON IN A MAXIMUM MOLECULAR RATIO OF B TO SI OF ABOUT 0.1 PERCENT, ADDING HYDROGEN CHLORIDE TO THE REACTION GAS, OPERATIVE TO SHIFT THE REACTION EQUILIBRIUM OF THE BORON TO INCREASE THE SEPARATION TEMPERATURE THEREOF, AND MAINTAINING THE SURFACE OF SAID CARRIER BODY AT A TEMPERATURE, AT WHICH THE SILICON IS SEPARATE AND DEPOSITED THEREON, AND WHICH IS BELOW THE MINIMUM SEPARATION TEMPERATURE OF THE BORON UNDER THE EXISTING EQUILIBRIUM CONDITIONS.
Claim 2
Independent Claim
152 words
A METHOD OF PRODUCING COMPACT SILICON, WHEREIN A REACTION GAS CONTAINING A HALOGEN SILANE INTERMIXED WITH PURIFIED HYDROGEN IS CONDUCTED OVER A HEATED CARRIER BODY MADE OF SILICON, TO LIBERATE THE SILICON FROM THE REACTION GAS DUE TO THERMAL DECOMPOSITION, WHEREBY SUCH SILICON IS PRECIPITATED UPON THE CARRIER AND THUS GROWS THEREON, COMPRISING THE STEPS OF MAINTAINING THE SILICON AND HYDROGEN IN THE REACTION GAS IN A MOLECULAR RATIO OF SI TO H OF AT LEAST ABOUT 2 PERCENT AND BORON IN A MAXIMUM MOLECULAR RATIO OF B TO SI OF ABOUT 0.1 PERCENT, ADDING HYDROGEN CHLORIDE TO THE REACTION GAS, OPERATIVE TO SHIFT THE REACTION EQUILIBRIUM OF THE BORON TO INCREASE THE SEPARATION TEMPERATURE THEREOF, AND MAINTAINING THE SURFACE OF SAID CARRIER BODY AT A TEMPERATURE, AT WHICH THE SILICON IS SEPARATE AND DEPOSITED THEREON, AND WHICH IS BELOW THE MINIMUM SEPARATION TEMPERATURE OF THE BORON UNDER THE EXISTING EQUILIBRIUM CONDITIONS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-10-18 | 1969-04-19 | 1969-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-10-18 | 1973-04-19 | 1973-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-10-18 | 1977-04-19 | 1977-10-19 | $7700.00 | Window Closed / Lapsed |