Method for probucmg homogeneously boped monocrystalline bodies of ele- mental semiconductors

Claim 1

IN THE PROCESS OF PRODUCING ELECTROCALLY PURE AND HOMOGENEOUSLY DOPED, ELEMENTAL SEMICONDUCTOR BODIES SELECTED FROM THE GROUP CONSISTING OF SILICON AND GERMANIUM BY PYROLYTICALLY PRECIPITATING THE SEMICONDUCTOR MATERIAL ONTO A HEATED CARRIER FROM A GEOUS ATMOSPHERE CONTAINING A REACTION GAS MIXTURE, THE STEPS OF EMPLOYING A MONOCRYSTALLINE CARRIER AND MAINTAINING SAID CARRIER AT A SUBSTANTIALLY CONSTANT TEMPERATURE, SAID CARRIER CONSISTING OF THE SAME SEMICONDUCTOR ELEMENT AS THE CORE TO BE PRECIPITATED AND BEING HOMOGENEOUSLY DOPED WITH THE SAME DOPING ELEMENT AS THE ONE TO BE PRECIPITATED; PRODUCING SAID REACTION GAS MIXTURE EXCLUSIVELY BY EVAPORATING A LIQUID MIXTURE OF A PURE LIQUID SEMICONDUCTORHALOGEN COMPOUND AND A PURE LIQUID DOPE-HALOGEN COMPOUND HAVING A BOILING POINT WITHIN 50*C. OF THE BOILING POINT OF SAID SEMICONDUCTOR-HALOGEN COMPOUND BY PASSING HYDROGEN THROUGH THE LIQUID MIXTURE AT A FLOW RATE OF AT LEAST 10 LITERS PER HOUR, THE DOPE ELEMENT IN SAID DOPE-HALOGEN COMPOUND BEING INDENTICAL WITH THE DOPE ELEMENT CONTAINED IN SAID CARRIER, THE RATIO OF SAID TWO HALOGEN COMPOUNDS IN SAID LIQUID MIXTURE CORRESPONDING AT SAID GIVEN TEMPERATURE TO A PRECIPITATION RATIO EQUAL TO THE SEMICONDUCTOR-TO-DOPE RATIO IN THE CARRIER BODY, WHEREBY THE RESULTING GROWN SEMICONDUCTOR BODY HAS THROUGHOUT A PREDETERMINED HOMOGENEOUS COMPOSITION AND DOPE CONCENTRATION.