US3314833A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of open-type diffusion in semiconductor by gaseous phase
Assignee: Siemens Schuckertwerke AG
•
Filing: 1964-09-28
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Granted: 1967-04-18
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Expires: 1984-09-28
Abstract
No abstract record available.
Inventors
- 👤 Arndt Heinz-Herbert
- 👤 Schadel Jurgen
- 👤 Uebel Hans
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 06:41
CPC Classifications
H; H10; H10P; H10P95/00; C; C30; C30B; C30B31/00; C30B31/06; C30B31/16; C30B31/165; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S118/00; Y10S118/90
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
122 words
THE METHOD OF DOPING SEMICONDUCTOR BODIES BY DIFFUSING DOPANT FROM THE GASEOUS PHASE INTO THE BODIES, WHICH COMPRISES PLACING THE SEMICONDUCTOR BODIES UPON A PERFORATED HOLDER SO AS TO COVER RESPECTIVE OPENINGS OF SAID HOLDER, DISPOSING TWO PLATE-SHAP DOPANT SOURCES ON OPPOSITE SIDES OF SAID HOLDER IN PARALLEL RELATION TO THE SEMICONDUCTOR BODIES, EACH OF SAID SOURCES BEING FORMED BY A PLATE OF CARRIER MATERIAL AND A SRUFACE REGION FACING SAID BODIES AND CONTAINING DOPING SUBSTANCE IN HOMOGENEOUS DISTRIBUTION WITHIN THE CARRIER MATERIAL, AND CONJOINTLY HEATING SAID BODIES ON THE HOLDER AND SAID TWO SOURCES IN AN OPEN SPACE AND THEREBY VAPORIZE A HOMOGENEOUS LAYER OF DOPANT FROM EACH OF SAID SOURCES ONTO ONE OF THE RESPECTIVE SIDES OF SAID SEMICONDUCTOR BODIES.
Claim 2
Independent Claim
122 words
THE METHOD OF DOPING SEMICONDUCTOR BODIES BY DIFFUSING DOPANT FROM THE GASEOUS PHASE INTO THE BODIES, WHICH COMPRISES PLACING THE SEMICONDUCTOR BODIES UPON A PERFORATED HOLDER SO AS TO COVER RESPECTIVE OPENINGS OF SAID HOLDER, DISPOSING TWO PLATE-SHAP DOPANT SOURCES ON OPPOSITE SIDES OF SAID HOLDER IN PARALLEL RELATION TO THE SEMICONDUCTOR BODIES, EACH OF SAID SOURCES BEING FORMED BY A PLATE OF CARRIER MATERIAL AND A SRUFACE REGION FACING SAID BODIES AND CONTAINING DOPING SUBSTANCE IN HOMOGENEOUS DISTRIBUTION WITHIN THE CARRIER MATERIAL, AND CONJOINTLY HEATING SAID BODIES ON THE HOLDER AND SAID TWO SOURCES IN AN OPEN SPACE AND THEREBY VAPORIZE A HOMOGENEOUS LAYER OF DOPANT FROM EACH OF SAID SOURCES ONTO ONE OF THE RESPECTIVE SIDES OF SAID SEMICONDUCTOR BODIES.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-04-17 | 1970-10-17 | 1971-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-04-17 | 1974-10-17 | 1975-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-04-17 | 1978-10-17 | 1979-04-18 | $7700.00 | Window Closed / Lapsed |