Method for diffusing active impurities into semiconductor materials

Claim 1

IN THE PRODUCTION OF A SILICON SEMICONDUCTOR ELECTRICAL TRANSLATING DEVICE, THE METHOD OF PRODUCING A JUNCTION BY DIFFUSING ATOMS OF AN ACTIVE IMPURITY INTO A SILICON SEMICONDUCTOR CRYSTAL OF A PREDETERMINED CONDUCTIVITY TYPE INCLUDING THE STEPS OF: PLACING THE SEMICONDUCTOR CRYSTAL AND AN ACTIVE IMPURITY BEARING COMPOUND SELECTED FROM THE GROUP CONSISTING OF HYDRIDES AND HYDRIDE SALTS INTO A CONTIANER; EVACUATING SAID CONTAINER; SEALING SAID CONTAINER FROM THE ATMOSPHERE; AND HEATING SAID CONTAINER TO A VALUE OF TEMPERATURE ABOVE THE DECOMPOSITION TEMPERATURE OF SAID COMPOUND AND BELOW THE TEMPERATURE AT WHICH A MOLTEN PHASE FORMS AND BELOW THE METLING POINT OF SAID CRYSTAL, WHEREBY HYDROGEN GAS AND THE ACTIVE IMPURITY FROM SAID COMPOUND ARE RELEASED FROM SAID COMPOUND THEREBY PROVIDING AN ACTIVE IMPURITY SOURCE AND MEANS FOR TRANSPORTING THE ACTIVE IMPURITY TO THE SURFACE OF SAID CRYSTAL FOR DIFFUSION INTO SAID CRYSTAL IN A REDUCING ATMOSPHERE.