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US3304595A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of making a conductive connection to a semiconductor device electrode

Assignee: NEC Corp
•
Filing: 1963-11-19
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Granted: 1967-02-21
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Expires: 1983-11-19
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Abstract

No abstract record available.

Inventors

  • 👤 Sato Katsuo
  • 👤 Irie Toshiaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 14:43
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10W20/00; H10W20/40; H10W72/00; H10W72/90; H10W72/50; H10W72/531; H10W72/5363; H10W72/59

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 157 words
THE METHOD OF MAKING A SEMICONDUCTOR DEVICE WHICH COMPRISES THE STEPS OF FORMING FIRST AND SECOND REGIONS IN A SEMICONDUCTOR MATERIAL, FORMING A SOFT METAL ELECTRODE ON ONE OF SAID REGIONS AND ANOTHER ELECTRODE ON THE OTHER OF SAID REGIONS, PROVIDING A LAYER OF INSULATING MATERIAL OVER SAI ELECTRODES AND THE SURFACE OF SAID SEMICONDUCTOR MATERIAL ADJACENT THERETO. PROVIDING A PLURALITY OF THIN CONDUCTIVE LAYERS SEPARATED FROM ONE ANOTHER ON THE SURFACE OF SAID INSULATING LAYER SO THAT AT LEAST A PORTION OF EACH CONDUCTIVE LAYER OVERLIES A DIFFERENT ELECTRODE, PRESSING A SHARP TOOL AGAINST ONE OF SAID CONDUCTIVE LAYERS TO PIERCE THE INSULATING LAYER IN THE REGION BETWEEN SAID ONE LAYER AND THE ELECTRODE ASSOCIATED THEREWITH AND TO PASS A PORTION OF SAID ONE LAYER THROUGH THE RESULTING RUPTURE IN SAID INSULATING LAYER AND ALSO TO DEFORM SAID LATTER MENTIONED ELECTRODE TO MAKE A PERMANENT ELECTRICAL CONNECTION BETWEEN SAID LATTER MENTIONED ELECTRODE AND SAID ONE LAYER,
Claim 2
Independent Claim 157 words
THE METHOD OF MAKING A SEMICONDUCTOR DEVICE WHICH COMPRISES THE STEPS OF FORMING FIRST AND SECOND REGIONS IN A SEMICONDUCTOR MATERIAL, FORMING A SOFT METAL ELECTRODE ON ONE OF SAID REGIONS AND ANOTHER ELECTRODE ON THE OTHER OF SAID REGIONS, PROVIDING A LAYER OF INSULATING MATERIAL OVER SAI ELECTRODES AND THE SURFACE OF SAID SEMICONDUCTOR MATERIAL ADJACENT THERETO. PROVIDING A PLURALITY OF THIN CONDUCTIVE LAYERS SEPARATED FROM ONE ANOTHER ON THE SURFACE OF SAID INSULATING LAYER SO THAT AT LEAST A PORTION OF EACH CONDUCTIVE LAYER OVERLIES A DIFFERENT ELECTRODE, PRESSING A SHARP TOOL AGAINST ONE OF SAID CONDUCTIVE LAYERS TO PIERCE THE INSULATING LAYER IN THE REGION BETWEEN SAID ONE LAYER AND THE ELECTRODE ASSOCIATED THEREWITH AND TO PASS A PORTION OF SAID ONE LAYER THROUGH THE RESULTING RUPTURE IN SAID INSULATING LAYER AND ALSO TO DEFORM SAID LATTER MENTIONED ELECTRODE TO MAKE A PERMANENT ELECTRICAL CONNECTION BETWEEN SAID LATTER MENTIONED ELECTRODE AND SAID ONE LAYER,

References Cited (Backward Citations)

US2680220A Cited
US3006067A Cited
US2899344A Cited
US2977672A Cited
US3200468A Cited
US3191070A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1970-02-20 1970-08-22 1971-02-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1974-02-20 1974-08-22 1975-02-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1978-02-20 1978-08-22 1979-02-21 $7700.00 Window Closed / Lapsed

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