§
Luxuse
Patent Intelligence
Sign In
← Back to Patent Explorer
US3006067A Expired / Lapsed US ⏱️ 0.0 years remaining

Thermo-compression bonding of metal to semiconductors, and the like

Assignee: AT&T Inc
•
Filing: 1956-10-31
•
Granted: 1961-10-31
•
Expires: 1976-10-31
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract 881,834. Semi-conductor devices. WESTERN ELECTRIC CO. Inc. Oct. 29, 1957 [Oct. 31, 1956], No. 14256/61. Divided out of 881,832. Class 37. A lead of gold, silver, aluminium, copper or gold-plated or tinned copper is bonded to a strip of gold or aluminium 1 mil. wide on a semi-conductor body by pressing the parts together at a temperature above 100‹ C. but below the lowest eutectic temperature of any combination of the materials in contact, and the dislocation forming and displacing temperatures of the semiconductor, and maintaining the pressure and temperature long enough to make a strong low resistance bond. In an example, 1 mil. wide strips 44, 46 of aluminium and gold respectively are first alloyed to a mesa 52 formed on a germanium or silicon block. Leads 48, 50 of gold and aluminium respectively are then pressed against the alloyed strips in a press for 5 seconds to 15 minutes under a pressure sufficient to deform the leads by from 10 to 20%. The electrodes thus formed constitute the emitter and base respectively of a transistor. The press consists of a head with a wedgeshaped or pointed lower end movable transversely and vertically with respect to a press bed. Both the head and the bed of the press are heated by electrical heating coils embedded therein.

Inventors

  • 👤 Orson L Anderson
  • 👤 Christensen Howard

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 00:36
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W72/00; H10W72/071; H10W76/00; H10W76/10; H10W76/17; H10W76/18; H10W76/60; H10W99/00; H10W72/0711; H10W72/07118; H10W72/075; H10W72/07531; H10W72/07532; H10W72/50; H10W72/521; H10W72/522; H10W72/531; H10W72/536; H10W72/5363; H10W72/541; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/5525; H10W72/555; H10W72/59; H10W72/90; H10W72/931; H10W72/932; H10W72/951; H10W72/952; Y; Y10; Y10S; Y10S228/00; Y10S228/903; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49169

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 130 words
A METHOD OF BONDING A METALLIC LEAD OF A MATERIAL SELECTED FROM THE GROUP CONSISTING OF GOLD, SILVER, ALUMINUM, COPPER, GOLD-PLATED COPPER AND TINNED COPPER TO A SEMICONDUCTIVE ELEMENT OF A MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON AND GERMANIUM, SAID METHOD COMPRISING MECHANICALLY CLEANING THE SURFACES TO BE BONDED TOGETHER, HEATING SAID METALLIC LEAD AND SAID SEMICONDUCTIVE ELEMENT TO A TEMPERATURE APPROACHING BUT LESS THAN THE EUTECTIC TEMPERATURE OF THE COMBINED MATERIALS AND THE DISLOCATION FORMING TEMPERATURE OF THE SEMICONDUCTIVE MATERIAL, PRESSING THE SURFACES TO BE BONDED TOGETHER WITH A PRESSURE SUFFICIENT TO CAUSE AT LEAST 10 PERCENT BUT NOT OVER THIRTY PERCENT DEFORMATION OF THE METALLIE LEAD, AND MAINTAINING SAID TEMPERATURE AND SAID PRESSURE UNTIL THE LEAD IS FIRMLY BONDED TO THE SURFACE OF THE SEMICONDUCTIVE ELEMENT.
Claim 2
Independent Claim 130 words
A METHOD OF BONDING A METALLIC LEAD OF A MATERIAL SELECTED FROM THE GROUP CONSISTING OF GOLD, SILVER, ALUMINUM, COPPER, GOLD-PLATED COPPER AND TINNED COPPER TO A SEMICONDUCTIVE ELEMENT OF A MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON AND GERMANIUM, SAID METHOD COMPRISING MECHANICALLY CLEANING THE SURFACES TO BE BONDED TOGETHER, HEATING SAID METALLIC LEAD AND SAID SEMICONDUCTIVE ELEMENT TO A TEMPERATURE APPROACHING BUT LESS THAN THE EUTECTIC TEMPERATURE OF THE COMBINED MATERIALS AND THE DISLOCATION FORMING TEMPERATURE OF THE SEMICONDUCTIVE MATERIAL, PRESSING THE SURFACES TO BE BONDED TOGETHER WITH A PRESSURE SUFFICIENT TO CAUSE AT LEAST 10 PERCENT BUT NOT OVER THIRTY PERCENT DEFORMATION OF THE METALLIE LEAD, AND MAINTAINING SAID TEMPERATURE AND SAID PRESSURE UNTIL THE LEAD IS FIRMLY BONDED TO THE SURFACE OF THE SEMICONDUCTIVE ELEMENT.
Claim 3
Dependent Claim 142 words
THE PROCESS OF MAKING A LOW RESISTANCE MECHANICALLY STRONG ELECTRICAL CONNECTION TO A BODY OF SEMICONDUCTIVE MATERIAL TAKEN FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON COMPRISING THE STEPS OF BONDING TO THE SURFACE OF SAID BODY A THIN STRIP OF THE ORDER OF A MIL WIDE OF A METAL TAKEN FROM THE GROUP CONSISTING OF GOLD AND ALUMINUM, AND PRESSING A WIRE LEAD OF THE ORDER OF A MIL DIAMETER OF A METAL SELECTED FROM THE GROUP CONSISTING OF GOLD, SILVER, ALUMINUM, COPPER, GOLD PLATED COPPER AND TINNED COPPER TO SAID THIN STRIP WITH A PRESSURE SUFFICIENT TO CAUSE PERCEPTIBLE DEFORMATION OF THE WIRE, WHILE MAINTAINING THE BODY AND THE WIRE LEAD AT TEMPERATURE LESS THAN BOTH THE EUTECTIC TEMPERATURE OF THE COMBINATION OF MATERIALS AND THE DISLOCATION FORMATION TEMPERATURE OF THE SEMICONDUCTOR, FOR A TIME TO FORM A STRONG BOND.
Claim 4
Dependent Claim 142 words
THE PROCESS OF MAKING A LOW RESISTANCE MECHANICALLY STRONG ELECTRICAL CONNECTION TO A BODY OF SEMICONDUCTIVE MATERIAL TAKEN FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON COMPRISING THE STEPS OF BONDING TO THE SURFACE OF SAID BODY A THIN STRIP OF THE ORDER OF A MIL WIDE OF A METAL TAKEN FROM THE GROUP CONSISTING OF GOLD AND ALUMINUM, AND PRESSING A WIRE LEAD OF THE ORDER OF A MIL DIAMETER OF A METAL SELECTED FROM THE GROUP CONSISTING OF GOLD, SILVER, ALUMINUM, COPPER, GOLD PLATED COPPER AND TINNED COPPER TO SAID THIN STRIP WITH A PRESSURE SUFFICIENT TO CAUSE PERCEPTIBLE DEFORMATION OF THE WIRE, WHILE MAINTAINING THE BODY AND THE WIRE LEAD AT TEMPERATURE LESS THAN BOTH THE EUTECTIC TEMPERATURE OF THE COMBINATION OF MATERIALS AND THE DISLOCATION FORMATION TEMPERATURE OF THE SEMICONDUCTOR, FOR A TIME TO FORM A STRONG BOND.

References Cited (Backward Citations)

US2564738A Cited
US2671746A Cited
US2698548A Cited
US2757324A Cited
US2739369A Cited
US2751808A Cited
US2817607A Cited
US2879587A Cited
US2805370A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1964-10-30 1965-05-01 1965-10-31 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1968-10-30 1969-05-01 1969-10-31 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1972-10-30 1973-05-01 1973-10-31 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag