Patent US3303071A successfully refreshed from Google Patents.
US3303071A
Expired / Lapsed
US
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Fabrication of a semiconductive device with closely spaced electrodes
Assignee: AT&T Inc
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Filing: 1964-10-27
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Granted: 1967-02-07
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Expires: 1984-10-27
Abstract
No abstract record available.
Inventors
- 👤 Kocsis Joseph
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:23
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D99/00; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
150 words
THE METHOD OF MAKING A SEMICONDUCTIVEDEVICE COMPRISING THE STEPS OF DEPOSITING ON A SURFACE OF A SEMICONDUCTIVE WAFER A FIRST LAYER OF AN INSULATING MATERIAL, REMOVING A PORTION OF THE LAYER FOR FORMING AN OPENING THEREIN AND EXPOSING THE UNDERLYING PORTION OF THE SEMICONDUCTIVE WAFER, DIFFUSING A SIGNIFICANT IMPURITY INTO THE SEMICONDUCTIVE WAFER THROUGH SAID OPENING FOR FORMING THEREIN A LOCALIZED IMPURITY DIFFUSED REGION, DEPOSITING A FIRST CONDUCTIVE COATING EXTENDING OVER A PORTION OF THE LAYER AND OVER THE OPENING IN SAID LAYER FOR FORMING A FIRST ELECTRICAL CONNECTION TO THE IMPURITY-DIFFUSED REGION OF THE WAFER, DEPOSITING A SECOND LAYER OF INSULATING MATERIAL OVER AT LEAST THE PORTION OF SAID CONDUCTIVE COATING OVERLYING THE IMPURITY-DIFFUSED REGION OF THE WAFER, REMOVING A PORTION OF SAID SECOND LAYER FOR FORMING AN OPENING THEREIN AND EXPOSING A PORTION OF THE CONDUCTIVE COATING WHICH OVERLIES A PORTION OF THE IMPURITY-DIFFUSED REGION OF THE WAFER,
Claim 2
Independent Claim
150 words
THE METHOD OF MAKING A SEMICONDUCTIVEDEVICE COMPRISING THE STEPS OF DEPOSITING ON A SURFACE OF A SEMICONDUCTIVE WAFER A FIRST LAYER OF AN INSULATING MATERIAL, REMOVING A PORTION OF THE LAYER FOR FORMING AN OPENING THEREIN AND EXPOSING THE UNDERLYING PORTION OF THE SEMICONDUCTIVE WAFER, DIFFUSING A SIGNIFICANT IMPURITY INTO THE SEMICONDUCTIVE WAFER THROUGH SAID OPENING FOR FORMING THEREIN A LOCALIZED IMPURITY DIFFUSED REGION, DEPOSITING A FIRST CONDUCTIVE COATING EXTENDING OVER A PORTION OF THE LAYER AND OVER THE OPENING IN SAID LAYER FOR FORMING A FIRST ELECTRICAL CONNECTION TO THE IMPURITY-DIFFUSED REGION OF THE WAFER, DEPOSITING A SECOND LAYER OF INSULATING MATERIAL OVER AT LEAST THE PORTION OF SAID CONDUCTIVE COATING OVERLYING THE IMPURITY-DIFFUSED REGION OF THE WAFER, REMOVING A PORTION OF SAID SECOND LAYER FOR FORMING AN OPENING THEREIN AND EXPOSING A PORTION OF THE CONDUCTIVE COATING WHICH OVERLIES A PORTION OF THE IMPURITY-DIFFUSED REGION OF THE WAFER,
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-02-06 | 1970-08-08 | 1971-02-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-02-06 | 1974-08-08 | 1975-02-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-02-06 | 1978-08-08 | 1979-02-07 | $7700.00 | Window Closed / Lapsed |