US3303070A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Simulataneous double diffusion process
Assignee: Westinghouse Electric Corp
•
Filing: 1964-04-22
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Granted: 1967-02-07
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Expires: 1984-04-22
Abstract
No abstract record available.
Inventors
- 👤 Paul F Schmidt
- 👤 Harold F John
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 12:11
CPC Classifications
C; C25; C25D; C25D11/00; C25D11/02; C25D11/32; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B31/00; C30B31/02; C30B31/06; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6324; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/151
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
114 words
A METHOD OF SIMULTANEOUS DOUBLE DIFFUSION COMPRISING HEATING AT AN ELEVATED TEMPERATURE A SEMICONDUCTIVE MEMBER HAVING ON AT LEAST PART OF ONE MAJOR SURFACE THEREOF A PHOSPHORUS-CONTAINING LAYER OF SILICON OXIDE, SAID PHOSPHORUS CONTAINING OXIDE LAYER HAVING A THICKNESS OF ABOUT 1000 A., HEATING ALUMINUM IN THE PRESENCE OF THE HEATED SEMICONDUCTIVE MEMBER TO PROVIDE A VAPOR OF ALUMINUM IN CONTACT WITH THE LAYER OF SILICON OXIDE ON THE SEMICONDUCTIVE MEMBER, AND CONTINUING THOSE CONDITIONS OF HEATING WHEREBY TE ALUMINUM DIFFUSES THROUGH THE OXIDE COATING AND THE PHOSPHORUS DIFFUSES FROM THE OXIDE COATING INTO THE BULK OF THE SEMICONDUCTIVE MEMBER SAID ALUMINUM DIFFUSING TO A GREATER DEPTH IN SAID SEMICONDUCTIVE MEMBER THAN SAID PHOSPHORUS.
Claim 2
Independent Claim
114 words
A METHOD OF SIMULTANEOUS DOUBLE DIFFUSION COMPRISING HEATING AT AN ELEVATED TEMPERATURE A SEMICONDUCTIVE MEMBER HAVING ON AT LEAST PART OF ONE MAJOR SURFACE THEREOF A PHOSPHORUS-CONTAINING LAYER OF SILICON OXIDE, SAID PHOSPHORUS CONTAINING OXIDE LAYER HAVING A THICKNESS OF ABOUT 1000 A., HEATING ALUMINUM IN THE PRESENCE OF THE HEATED SEMICONDUCTIVE MEMBER TO PROVIDE A VAPOR OF ALUMINUM IN CONTACT WITH THE LAYER OF SILICON OXIDE ON THE SEMICONDUCTIVE MEMBER, AND CONTINUING THOSE CONDITIONS OF HEATING WHEREBY TE ALUMINUM DIFFUSES THROUGH THE OXIDE COATING AND THE PHOSPHORUS DIFFUSES FROM THE OXIDE COATING INTO THE BULK OF THE SEMICONDUCTIVE MEMBER SAID ALUMINUM DIFFUSING TO A GREATER DEPTH IN SAID SEMICONDUCTIVE MEMBER THAN SAID PHOSPHORUS.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-02-06 | 1970-08-08 | 1971-02-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-02-06 | 1974-08-08 | 1975-02-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-02-06 | 1978-08-08 | 1979-02-07 | $7700.00 | Window Closed / Lapsed |