US2974073A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making phosphorus diffused silicon semiconductor devices
Assignee: RCA Corp
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Filing: 1958-12-04
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Granted: 1961-03-07
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Expires: 1978-12-04
Abstract
No abstract record available.
Inventors
- 👤 Lorne D Armstrong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:33
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/1404; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S148/00; Y10S148/043
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
47 words
THE METHOD OF INTRODUCING A RECTIFYING BARRIER IN A SILICON WAFER, COMPRISING THE STEPS OF HEATING SAID WAFER TO A TEMPERATURE OF ABOUT 1000*C. TO 1350*C. IN VAPORS OF AMMONIUM PHOSPHATE SO AS TO SIMULTANEOUSLY FORM A PHOSPHORUS-CONTAINING FILM AND A PHOSPHORUS-DIFFUSED SURFACE LAYER ON SAID WAFER.
Claim 2
Independent Claim
47 words
THE METHOD OF INTRODUCING A RECTIFYING BARRIER IN A SILICON WAFER, COMPRISING THE STEPS OF HEATING SAID WAFER TO A TEMPERATURE OF ABOUT 1000*C. TO 1350*C. IN VAPORS OF AMMONIUM PHOSPHATE SO AS TO SIMULTANEOUSLY FORM A PHOSPHORUS-CONTAINING FILM AND A PHOSPHORUS-DIFFUSED SURFACE LAYER ON SAID WAFER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-03-06 | 1964-09-05 | 1965-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-03-06 | 1968-09-05 | 1969-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-03-06 | 1972-09-05 | 1973-03-07 | $7700.00 | Window Closed / Lapsed |