Passivated alloy diode

Claim 1

IN A SEMICONDUCTOR DIODE DEVICE, A SEMICONDUCTOR ELEMENT OF SEMICONDUCTOR MATERIAL SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON AND HAVING OPPOSED FIRST AND SECOND SIDES, THE SURFACES OF SAID SIDES BEING SUBSTANTIALLY PLANE AND PARALLEL, SAID SEMICONDUCTOR ELEMENT COMPRISING FIRST AND SECOND REGIONS OF SEMICONDUCTOR MATERIAL OF P CONDUCTIVITY TYPE ON SAID FIRST SIDE OF SAID WAFER, SAID FIRST REGION OF ALLOY REGROWTH SEMICONDUCTOR MATERIAL, DOPED P TYPE WITH AN IMPURITY SELECTED FROM THE GROUP CONSISTING OF BORON, ALUMINUM, GALLIUM, OR INDIUM, SAID SECOND REGION OF SEMICONDUCTOR MATERIAL MADE P TYPE BY SOLID STATE DIFFUSION OF AN IMPURITY SELECTED FROM THE GROUP CONSISTING OF BORON, ALUMINUM, GALLIUM, AND INDIUM INTO SAID SEMICONDUCTOR MATERIAL, SAID FIRST REGION BONDED BY SAID SECOND REGION AT SAID FIRST SIDE, A THIRD REGION OF THE OPPOSITE CONDUCTIVITY TYPE FORMING AN ABRUPT PN JUNCTION WITH SAID FIRST REGION, SAID THIRD REGION FORMING A GRADED PN JUNCTION WITH SAID SECOND REGION, SAID GRADED PN JUNCTION EXTENDING TO THE SURFACE OF SAID FIRST SIDE OF SAID SEMICONDUCTOR ELEMENT, SAID GRANDED JUNCTION COATED AT SAID SURFACE OF SAID FIRST SIDE WITH A FILM OF METALLIC OXIDE DIELECTRIC MATERIAL, SAID GRADED JUNCTION HAVING A HIGHER AVALANCHE BREAKDOWN CHARACTERISTIC THAN SAID ABRUPT JUNCTION, AND A METAL COATING ON SAID FIRST REGION ON SAID FIRST SIDE, AND A METAL COATING ON SAID THIRD REGION ON SAID SECOND SIDE.