Semiconductor devices with bi-polar injection characteristics

Claim 1

A SEMICONDUCTOR DEVICE HAVING BI-POLAR INJECTING CHARACTERISTICS CONSISTING OF, (1) A FIRST SINGLE CRYSTAL SEMICONDUCTOR ELEMENT OF A FIRST TYPE OF SEMICONDUCTIVITY, (2) A MASS-OF-METAL IN INTIMATE CONTACT WITH ONE SIDE OF SAID FIRST SEMICONDUCTOR ELEMENT, SAID MASS-OF-METAL PROVIDING A SOURCE OF MINORITY CARRIERS TO SAID FIRST ELEMENT WHEN ENERGIZED BY REVERSE ELECTRICAL POTENTIAL, (3) A SECOND SEMICONDUCTOR ELEMENT OF A SECOND TYPE OF SEMICONDUCTIVITY ON ANOTHER SIDE OF SAID FIRST ELEMENT, (4) A FIRST SEMICONDUCTOR TRANSITION REGION DISPOSED BETWEEN THE FIRST AND THE SECOND SEMICONDUCTOR ELEMENTS, (5) A THIRD SEMICONDUCTOR ELEMENT HAVING THE SAME TYPE OF SEMICONDUCTIVITY AS SAID FIRST ELEMENT, SAID THIRD ELEMENT BEING DISPOSED ON A SURFACE OF SAID SECOND ELEMENT, SAID THIRD ELEMENT BEING STRUCTURALLY ISOLATED FROM SAID FIRST ELEMENT, SAID THIRD ELEMENT SERVING AS A FIRST EMITTER ELEMENT, (6) A SECOND SEMICONDUCTOR TRANSITION REGION DISPOSED BETWEEN SAID SECOND AND THIRD ELEMENTS, (7) A FOURTH SEMICONDUCTOR ELEMENT HAVING THE SAME TYPE OF SEMICONDUCTIVITY AS SAID FIRST ELEMENT AND SAID THIRD ELEMENT, SAID FOURTH ELEMENT BEING DISPOSED ON A SURFACE OF SAID SECOND ELEMENT, SAID FOURTH ELEMENT BEING STRUCTURALLY ISOLATED FROM SAID FIRST ELEMENT AND SAID THIRD ELEMENT, SAID FOURTH ELEMENT SERVING AS A SECOND EMITTER ELEMENT, AND (8) A THIRD TRANSITION REGION DISPOSED BETWEEN THE FOURTH ELEMENT AND THE SECOND ELEMENT, SAID SECOND AND THIRD TRANSITION REGIONS BEING WITHIN A DIFFUSION LENGTH OF SAID FIRST TRANSITION REGION SAID MINORITY CARRIERS FLOWING FROM THE MASS-OF-METAL TO THE THIRD ELEMENT AND THE SECOND ELEMENT WHEN A POTENTIAL OF A FIRST POLARITY IS APPLIED TO THE THIRD ELEMENT, AND SAID MINORITY CARRIES FLOWING TO THE FOURTH ELEMENT AND THE SECOND ELEMENT WHEN A POTENTIAL OF A SECOND POLARITY IS APPLIED TO THE FOURTH ELEMENT.